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2SB1261-Z
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Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, TO-251-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SB1261-Z
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · TO-251-3L
2SB1261-Z from Changjiang Electronics Tech (CJ), in a TO-251-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, driven with IB1=-IB2=-0.1A in the switching test and -150mA for VCE(sat) and VBE(sat) at IC=-1.5A. |
| 2 | COLLECTOR | passive | Collector terminal, rated for VCBO and VCEO of -60 V, continuous collector current of -3 A, and collector power dissipation of 1 W. |
| 3 | EMITTER | passive | Emitter terminal, rated for emitter-base voltage VEBO of -7 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-251-3L |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | V | IC=-1mA, IB=0 | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-100µA, IE=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -7 | V | IE=-100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -10 | µA | VCB=-60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -10 | µA | VEB=-7V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 60 | VCE=-2V, IC=-200mA | 1 | |||
| DC current gain | hFE(2) | 100 | 400 | VCE=-2V, IC=-600mA | 1 | ||
| DC current gain | hFE(3) | 50 | VCE=-2V, IC=-2A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-1.5A, IB=-150mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-1.5A, IB=-150mA | 1 | ||
| Transition frequency | fT | 50 | MHz | VCE=-5V, IC=-1.5A | 1 | ||
| Collector output capacitance | Cob | 40 | pF | VCB=-10V, IE=0, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -60 | V | 1 | |||
| Emitter-base voltage | VEBO | -7 | V | 1 | |||
| Collector current, continuous | IC | -3 | A | 1 | |||
| Collector power dissipation | PD | 1 | W | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SB1261-Z - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251-3L (KiCad packages3D, STEP)
- 3D model files:
2sb1261-z-etched.step/2sb1261-z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1261-z.step/2sb1261-z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (2 pp, sha256
93e57279f93d8fb2, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB1261-Z
**Changjiang Electronics Tech (CJ)** · Bipolar Transistors - BJT · TO-251-3L
2SB1261-Z from Changjiang Electronics Tech (CJ), in a TO-251-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, driven with IB1=-IB2=-0.1A in the switching test and -150mA for VCE(sat) and VBE(sat) at IC=-1.5A. |
| 2 | COLLECTOR | passive | Collector terminal, rated for VCBO and VCEO of -60 V, continuous collector current of -3 A, and collector power dissipation of 1 W. |
| 3 | EMITTER | passive | Emitter terminal, rated for emitter-base voltage VEBO of -7 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-251-3L |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | | | V | IC=-1mA, IB=0 | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -60 | | | V | IC=-100µA, IE=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -7 | | | V | IE=-100µA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | -10 | µA | VCB=-60V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | -10 | µA | VEB=-7V, IC=0 | 1 |
| DC current gain | hFE(1) | 60 | | | | VCE=-2V, IC=-200mA | 1 |
| DC current gain | hFE(2) | 100 | | 400 | | VCE=-2V, IC=-600mA | 1 |
| DC current gain | hFE(3) | 50 | | | | VCE=-2V, IC=-2A | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.3 | V | IC=-1.5A, IB=-150mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | -1.2 | V | IC=-1.5A, IB=-150mA | 1 |
| Transition frequency | fT | 50 | | | MHz | VCE=-5V, IC=-1.5A | 1 |
| Collector output capacitance | Cob | | | 40 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
| Collector-base voltage | VCBO | | | -60 | V | | 1 |
| Collector-emitter voltage | VCEO | | | -60 | V | | 1 |
| Emitter-base voltage | VEBO | | | -7 | V | | 1 |
| Collector current, continuous | IC | | | -3 | A | | 1 |
| Collector power dissipation | PD | | | 1 | W | | 1 |
| Junction temperature | TJ | | | 150 | ℃ | | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `2SB1261-Z`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251-3L (KiCad packages3D, STEP)
- 3D model files: `2sb1261-z-etched.step` / `2sb1261-z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb1261-z.step` / `2sb1261-z.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/2sb1261-z-datasheet.pdf) (2 pp, sha256 `93e57279f93d8fb2`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb1261-z-datasheet.pdf)