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2SB1260T100Q

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SB1260T100Q

ROHM Semicon · Bipolar (BJT) · SOT-89

2SB1260T100Q from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; VEBO is -5 V max and IEBO is -1 mA max at VEB = -4 V.
2 C passive Collector (center lead); VCEO is -80 V, VCBO is -80 V, and IC is -1.0 A DC (-2.0 A pulsed).
3 E passive Emitter of the PNP transistor, the reference terminal for VCE(sat) of -0.4 V max at IC/IB = -500 mA/-50 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -80 V 2
Collector-emitter voltage VCEO -80 V 2
Emitter-base voltage VEBO -5 V 2
Collector current DC IC -1 A 2
Collector current pulsed ICP -2 A *1 Pw=20ms, duty=1/2 2
Junction temperature Tj 150 °C 2
Range of storage temperature Tstg -55 150 °C 2
Collector-emitter breakdown voltage BVCEO -80 V IC = -1mA 2
Collector-base breakdown voltage BVCBO -80 V IC = -50mA 2
Emitter-base breakdown voltage BVEBO -5 V IE = -50mA 2
Collector-emitter saturation voltage VCE(sat) -0.4 V IC = -1A, IB = -50mA 2
Emitter cut-off current IEBO -1 mA VEB = -4V 2
DC current gain hFE 120 390 - VCE = -3V, IC = -0.1A 2
Transition frequency fT 100 MHz VCE = -10V, IE = 50mA, f = 100MHz 2
Output capacitance (2SB1260) Cob 20 pF VCB = -10V, IE = 0A, f = 1MHz 2

CAD (KiCad official)

  • Symbol: 2SB1260T100Q
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sb1260t100q-etched.step / 2sb1260t100q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb1260t100q.step / 2sb1260t100q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 1d1fe78b853bed4f, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF