component
2SB1260
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3h ago |
| viewers | 3h ago |
| 2sb1260-etched.glb | 3h ago |
| 2sb1260-etched.step | 3h ago |
| 2sb1260-hero.glb | 3h ago |
| 2sb1260-hero.overlay.json | 3h ago |
| 2sb1260.glb | 3h ago |
| 2sb1260.kicad_mod | 3h ago |
| 2sb1260.kicad_sym | 3h ago |
| 2sb1260.lbr | 3h ago |
| 2sb1260.step | 3h ago |
| package.json | 3h ago |
| page.json | 3h ago |
| README.md | 3h ago |
2SB1260
Changjing · Bipolar (BJT) · SOT-89-3L
2SB1260 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base breakdown voltage is -5 V minimum (VEBO -5 V maximum rating). |
| 2 | COLLECTOR | passive | Collector terminal; rated for VCBO -80 V, VCEO -80 V, collector current IC -1 A and collector power dissipation PC 500 mW. |
| 3 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage is -5 V minimum (VEBO -5 V maximum rating). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -80 | V | IC=-50µA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-50µA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -1 | µA | VCB=-60V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -1 | µA | VEB=-4V,IC=0 | 1 | ||
| DC current gain | hFE | 82 | 390 | VCE=-3V, IC=-0.1A | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC=-500mA,IB=-50mA | 1 | ||
| Collector output capacitance | Cob | 25 | pF | VCB=-10V,IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=-5V,IC=-50mA, f=30MHz | 1 | ||
| Collector-Base Voltage | VCBO | -80 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -80 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -1 | A | 1 | |||
| Collector Power Dissipation | PC | 500 | mW | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SB1260 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
2sb1260-etched.step/2sb1260-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1260.step/2sb1260.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (1 pp, sha256
f6c6ec0f88827828, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).