component
2SB1197KT146Q
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| 2sb1197kt146q-etched.glb | 8d ago |
| 2sb1197kt146q-etched.step | 8d ago |
| 2sb1197kt146q-hero.glb | 8d ago |
| 2sb1197kt146q-hero.overlay.json | 8d ago |
| 2sb1197kt146q.glb | 8d ago |
| 2sb1197kt146q.kicad_mod | 8d ago |
| 2sb1197kt146q.kicad_sym | 8d ago |
| 2sb1197kt146q.lbr | 8d ago |
| 2sb1197kt146q.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
2SB1197KT146Q
ROHM Semicon · Bipolar (BJT) · TO-236-3(SOT-23-3)
2SB1197KT146Q from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; VEBO is limited to -5 V. |
| 2 | B | passive | Base of the PNP transistor; hFE is 120 to 390 at VCE = -3 V, IC = -100 mA. |
| 3 | C | passive | Collector of the PNP transistor; IC is rated -800 mA, VCEO -32 V and VCBO -40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -40 | V | IC = -50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -32 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -5 | V | IE = -50μA | 2 | ||
| Collector cut-off current | ICBO | -500 | nA | VCB = -20V | 2 | ||
| Emitter cut-off current | IEBO | -500 | nA | VEB = -4V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -500 | mV | IC = -500mA, IB = -50mA | 2 | ||
| DC current gain | hFE | 120 | 390 | - | VCE = -3V, IC = -100mA | 2 | |
| Output capacitance | Cob | 12 | 30 | pF | VCB = -10V, IE = 0A, f = 1MHz | 2 | |
| Collector-base voltage | VCBO | -40 | V | Ta = 25°C | 2 | ||
| Collector-emitter voltage | VCEO | -32 | V | Ta = 25°C | 2 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta = 25°C | 2 | ||
| Collector current | IC | -800 | mA | Ta = 25°C | 2 | ||
| Power dissipation | PD | 200 | mW | *1 Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SB1197KT146Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
2sb1197kt146q-etched.step/2sb1197kt146q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1197kt146q.step/2sb1197kt146q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
f51c51ad7d870697, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).