component
2SB1184
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sb1184-etched.glb | 6d ago |
| 2sb1184-etched.step | 6d ago |
| 2sb1184-hero.glb | 6d ago |
| 2sb1184-hero.overlay.json | 6d ago |
| 2sb1184.glb | 6d ago |
| 2sb1184.kicad_mod | 6d ago |
| 2sb1184.kicad_sym | 6d ago |
| 2sb1184.lbr | 6d ago |
| 2sb1184.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SB1184
Changjing · Bipolar (BJT) · TO-252-2L
2SB1184 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base voltage limited to -5 V (VEBO) and base-emitter saturation voltage specified at -1.2 V maximum for IC=-1.5 A, IB=-0.15 A. |
| 2 | COLLECTOR | passive | Collector terminal rated for -60 V collector-base voltage (VCBO), -50 V collector-emitter voltage (VCEO), and -3 A continuous collector current, with collector power dissipation of 1 W. |
| 3 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-50 µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-50µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-50µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -1 | µA | VCB=-40V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -1 | µA | VEB=-4V, I C=0 | 2 | ||
| DC current gain (rank P to R range) | hFE(1) | 82 | 390 | VCE=-3V, I C=-0.5A | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -1 | V | IC=-2A, IB=-0.2A | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-1.5A, IB=-0.15A | 2 | ||
| Transition frequency | fT | 70 | MHz | VCE=-5V, I C=-0.5A, f=30MHz | 2 | ||
| Collector output capacitance | Cob | 50 | pF | VCB=-10V, IE=0, f=1MHz | 2 | ||
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -3 | A | 1 | |||
| Collector power dissipation | PC | 1 | W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SB1184 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
2sb1184-etched.step/2sb1184-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1184.step/2sb1184.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
1aae399fdb7e0dc5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).