# 2SB1132SQ-Q

**PJSEMI** · Bipolar (BJT) · SOT-89

2SB1132SQ-Q from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the emitter-base voltage rating is 5 V (VEBO) and the VCE(sat) limit of 0.5 V max is specified at -IC = 500 mA with -IB = 50 mA. |
| 2 | Collector | passive | Collector terminal rated for -VCBO 40 V and -VCEO 32 V, with collector current -IC 1 A continuous and -ICP 2 A pulsed, within 500 mW total power dissipation. |
| 3 | Emitter | passive | Emitter terminal; emitter-base breakdown V(BR)EBO is 5 V minimum at -IE = 50 μA, and the emitter-base voltage rating is -VEBO 5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain, Current Gain Group P | HFE | 82 |  | 180 |  | at VCE = 2 V, IC = 500 mA | 1 |
| DC Current Gain, Current Gain Group Q | HFE | 120 |  | 270 |  | at VCE = 2 V, IC = 500 mA | 1 |
| DC Current Gain, Current Gain Group R | HFE | 180 |  | 390 |  | at VCE = 2 V, IC = 500 mA | 1 |
| Collector Base Cutoff Current | -ICBO |  |  | 0.5 | μA | at -VCB = 20 V | 1 |
| Emitter Base Cutoff Current | -IEBO |  |  | 0.5 | μA | at -VEB = 4 V | 1 |
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 |  |  | V | at -IC = 50 μA | 1 |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 32 |  |  | V | at -IC = 1 mA | 1 |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 |  |  | V | at -IE = 50 μA | 1 |
| Collector Emitter Saturation Voltage | -VCE(sat) |  | 0.2 | 0.5 | V | at -IC = 500 mA, -IB = 50 mA | 1 |
| Collector Output Capacitance | Cob |  | 20 | 30 | pF | at -VCB = 10 V, IE = 0, f = 1MHz | 1 |
| Collector Base Voltage | -VCBO |  |  | 40 | V | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Collector Emitter Voltage | -VCEO |  |  | 32 | V | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Emitter Base Voltage | -VEBO |  |  | 5 | V | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Collector Current | -IC |  |  | 1 | A | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Pulsed Collector Current | -ICP |  |  | 2 | A | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Power Dissipation | PD |  |  | 500 | mW | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Junction Temperature | TJ |  |  | 150 | °C | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C | Ratings at 25℃ ambient temperature unless otherwise specified | 1 |

## CAD (KiCad official)

- Symbol: `2SB1132SQ-Q`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sb1132sq-q-etched.step` / `2sb1132sq-q-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb1132sq-q.step` / `2sb1132sq-q.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912085941673984) (3 pp, sha256 `9a4c2c5a4da058e9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sb1132sq-q-datasheet.pdf)