component
2SB1132 BAR
Public Made by Adomby adom
GME(银河微电) Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdown2SB1132 BAR
GME(银河微电) · Bipolar (BJT) · SOT-89
2SB1132 BAR from GME(银河微电), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; emitter-base breakdown voltage VEBO is -5 V. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; VEBO is -5 V relative to base. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor, also the center tab; VCBO -40 V, VCEO -32 V, continuous IC -1 A (-2 A listed as second value). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GME(银河微电) |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC = -50μA, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -32 | V | IC = -1mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -50μA, IC = 0 | 2 | ||
| Collector Cut-off Current | ICBO | -0.5 | μA | VCB = -20V, IE = 0 | 2 | ||
| DC Current Gain (rank R, marking BAR) | hFE | 180 | 390 | - | VCE = -3V, IC = -100mA | 2 | |
| Collector-emitter Saturation Voltage | VCE(sat) | -0.2 | -0.5 | V | IC = -500mA, IB = -50mA | 2 | |
| Collector Output Capacitance | COBO | 20 | 30 | pF | VCB = -10V, IE = 0, f = 1MHZ | 2 | |
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -32 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current (Continuous) | IC | -1 | A | 1 | |||
| Collector Current (second printed value, label not printed) | IC | -2 | A | 1 | |||
| Power Dissipation | PD | 500 | mW | 1 | |||
| Thermal Resistance (Junction-to-Ambient) | RθJA | 250 | C/W | 1 | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-89 Ordering Information | 1 |
CAD (KiCad official)
- Symbol:
2SB1132 BAR - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb1132-bar-etched.step/2sb1132-bar-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1132-bar.step/2sb1132-bar.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GME(银河微电) datasheet (4 pp, sha256
bf284d6c74b9a8e4, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).