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Ray Publish 0.1.0 3407d5d 7d ago

2SB1116AG-G-T92-B

UTC Unisonic Tech · Bipolar (BJT) · TO-92

2SB1116AG-G-T92-B from UTC Unisonic Tech, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter pin for the TO-92 package, with emitter-to-base voltage rated at -6 V (VEBO) and emitter cut-off current specified at VEB=-6V.
2 C passive Collector pin for the TO-92 package, rated for DC collector current of -1 A and pulse collector current of -2 A (pulse width ≤10 ms, duty cycle ≤50%).
3 B input Base pin for the TO-92 package, driving the transistor with base current IB such as -50 mA for the stated saturation test conditions (IC=-1A, IB=-50mA).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Base-Emitter On Voltage VBE(ON) -600 -650 -700 mV VCE=-2V, IC=-50mA 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.2 -0.3 V IC=-1A, IB=-50mA 2
Base-Emitter Saturation Voltage VBE(SAT) -0.9 -1.2 V IC=-1A, IB=-50mA 2
Collector Cut-Off Current ICBO -100 nA VCB=-60V, IE=0 2
Emitter Cut-Off Current IEBO -100 nA VEB=-6V, IC=0 2
DC Current Gain (2SB1116A) hFE1 135 400 VCE=-2V, IC=-100mA 2
DC Current Gain, rank G classification hFE1 200 400 Rank G of hFE1 classification table 2
DC Current Gain hFE2 81 VCE=-2V, IC=-1A 2
Transition Frequency fT 70 120 MHz VCE=-2V, IC=-100mA 2
Output Capacitance COB 25 pF VCB=-10V, IE=0, f=1MHz 2
Turn On Time tON 0.07 μs VCC=-10V, IC=-100mA, IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V 2
Storage Time tSTG 0.7 μs VCC=-10V, IC=-100mA, IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V 2
Fall Time tF 0.07 μs VCC=-10V, IC=-100mA, IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V 2
Collector to Base Voltage (2SB1116A) VCBO -80 V TA=25°C (ratings header) 2
Collector to Emitter Voltage (2SB1116A) VCEO -60 V TA=25°C (ratings header) 2
Emitter to Base Voltage VEBO -6 V TA=25°C (ratings header) 2
DC Collector Current IC -1 A TA=25°C (ratings header) 2
Collector Current Pulse ICM -2 A Pulse width≦10ms, Duty cycle≦50% 2
Total Power Dissipation (TO-92) PC 750 mW TO-92 package 2
Junction Temperature TJ 150 °C 2
Operating Temperature TOPR -20 85 °C 2
Storage Temperature TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: 2SB1116AG-G-T92-B
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2sb1116ag-g-t92-b-etched.step / 2sb1116ag-g-t92-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb1116ag-g-t92-b.step / 2sb1116ag-g-t92-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 52812ac2961d3087, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF