# 2SAR572D3FRATL

**ROHM Semicon** · Bipolar (BJT) · TO-252

2SAR572D3FRATL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; VEBO max is -6 V and the collector-emitter saturation voltage is -400 mV max at IC/IB = -2 A/-100 mA. |
| 2 | Collector | passive | Collector terminal (also the tab) with VCEO of -30 V, VCBO of -30 V, and IC of -5 A continuous (-10 A pulsed, Pw = 10 ms). |
| 3 | Emitter | passive | Emitter terminal of the PNP transistor, the reference for the -6 V maximum emitter-base voltage. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -30 |  |  | V | IC = -100μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | -30 |  |  | V | IC = -1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | -6 |  |  | V | IE = -100μA | 2 |
| Collector cut-off current | ICBO |  |  | -1 | μA | VCB = -30V | 2 |
| Emitter cut-off current | IEBO |  |  | -1 | μA | VEB = -4V | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | -200 | -400 | mV | IC = -2A, IB = -100mA | 2 |
| DC current gain | hFE | 200 |  | 500 | - | VCE = -3V, IC = -500mA | 2 |
| Collector-base voltage | VCBO |  |  | -30 | V |  | 2 |
| Collector-emitter voltage | VCEO |  |  | -30 | V |  | 2 |
| Emitter-base voltage | VEBO |  |  | -6 | V |  | 2 |
| Collector current | IC |  |  | -5 | A |  | 2 |
| Collector current (pulsed) | ICP |  |  | -10 | A | Pw=10ms Single Pulse | 2 |
| Power dissipation | PD |  |  | 10 | W | Tc=25℃ | 2 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 2 |
| Range of storage temperature | Tstg | -55 |  | 150 | ℃ |  | 2 |

## CAD (KiCad official)

- Symbol: `2SAR572D3FRATL`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2sar572d3fratl-etched.step` / `2sar572d3fratl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sar572d3fratl.step` / `2sar572d3fratl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756127519861026816) (9 pp, sha256 `5e304ff91220ffd5`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sar572d3fratl-datasheet.pdf)