component
2SAR553P5T100
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| 2sar553p5t100-etched.glb | 7d ago |
| 2sar553p5t100-etched.step | 7d ago |
| 2sar553p5t100-hero.glb | 7d ago |
| 2sar553p5t100-hero.overlay.json | 7d ago |
| 2sar553p5t100.glb | 7d ago |
| 2sar553p5t100.kicad_mod | 7d ago |
| 2sar553p5t100.kicad_sym | 7d ago |
| 2sar553p5t100.lbr | 7d ago |
| 2sar553p5t100.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
2SAR553P5T100
ROHM Semicon · Bipolar (BJT) · SOT-89
2SAR553P5T100 from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -6 V, IEBO max -1.0 µA at VEB = -4 V, IB = -35 mA used for VCE(sat) test. |
| 2 | C | passive | Collector (center lead, also the tab) of the PNP transistor; VCEO -50 V, VCBO -50 V, IC -2 A continuous, ICP -4 A pulsed. |
| 3 | E | passive | Emitter of the PNP transistor, connected to the most positive supply in typical high-side use. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | -200 | -400 | mV | IC = -700mA, IB = -35mA, pulsed | 2 | |
| DC current gain | hFE | 180 | 450 | - | VCE = -2V, IC = -50mA | 2 | |
| Collector-base breakdown voltage | BVCBO | -50 | V | IC = -100μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -50 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -100μA | 2 | ||
| Collector cut-off current | ICBO | -1 | μA | VCB = -50V | 2 | ||
| Emitter cut-off current | IEBO | -1 | μA | VEB = -4V | 2 | ||
| Collector-base voltage | VCBO | -50 | V | 2 | |||
| Collector-emitter voltage | VCEO | -50 | V | 2 | |||
| Emitter-base voltage | VEBO | -6 | V | 2 | |||
| Collector current | IC | -2 | A | 2 | |||
| Collector current (pulse) | ICP | -4 | A | Pw=10ms, Single Pulse | 2 | ||
| Power dissipation (on recommended land) | PD | 0.5 | W | Each terminal mounted on a recommended land | 2 | ||
| Power dissipation (ceramic board) | PD | 2 | W | Mounted on a ceramic board (40×40×0.7mm) | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SAR553P5T100 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sar553p5t100-etched.step/2sar553p5t100-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sar553p5t100.step/2sar553p5t100.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (8 pp, sha256
f43a78adadeee017, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).