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2SAR513P5T100

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ROHM Semicon Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SAR513P5T100

ROHM Semicon · Bipolar Transistors - BJT · SOT-89

2SAR513P5T100 from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives IB = -25mA at IC = -500mA and VEBO of -6V maximum.
2 C passive Collector of the PNP transistor (also the center tab); the datasheet gives VCEO of -50V, IC of -1A and ICP of -2A maximum.
3 E passive Emitter of the PNP transistor; the datasheet gives VCBO of -50V and VEBO of -6V maximum ratings.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO -50 V IC = -100μA 2
Collector-emitter breakdown voltage BVCEO -50 V IC = -1mA 2
Emitter-base breakdown voltage BVEBO -6 V IE = -100μA 2
Collector cut-off current ICBO -1 μA VCB = -50V 2
Emitter cut-off current IEBO -1 μA VEB = -4V 2
Collector-emitter saturation voltage VCE(sat) -200 -400 mV IC = -500mA, IB = -25mA 2
DC current gain hFE 180 450 VCE = -2V, IC = -50mA 2
Collector-base voltage VCBO -50 V Ta = 25°C 2
Collector-emitter voltage VCEO -50 V Ta = 25°C 2
Emitter-base voltage VEBO -6 V Ta = 25°C 2
Collector current IC -1 A Ta = 25°C 2
Collector current (pulse) ICP -2 A Pw=10ms, Single Pulse 2
Power dissipation (reference land) PD 0.5 W Each terminal mounted on a reference land 2
Power dissipation (ceramic board) PD 2 W Mounted on a ceramic board (40×40×0.7mm) 2
Junction temperature Tj 150 ℃ Ta = 25°C 2
Range of storage temperature Tstg -55 150 ℃ 2
Transition frequency fT 400 MHz VCE = -10V, IE = 200mA, f = 100MHz, pulsed 2
Output capacitance Cob 12 pF VCB = -10V, IE = 0A, f = 1MHz 2
Turn-On time ton 40 ns IC = -500mA, IB1 = -50mA, IB2 = 50mA, VCC ⋍ -10V, RL = 20Ω 2
Storage time tstg 250 ns IC = -500mA, IB1 = -50mA, IB2 = 50mA, VCC ⋍ -10V, RL = 20Ω 2
Fall time tf 35 ns IC = -500mA, IB1 = -50mA, IB2 = 50mA, VCC ⋍ -10V, RL = 20Ω 2

CAD (KiCad official)

  • Symbol: 2SAR513P5T100
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sar513p5t100-etched.step / 2sar513p5t100-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sar513p5t100.step / 2sar513p5t100.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 05ba6e8f81f77d1f, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF