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2SAR512PFRAT100

Public Made by Adom

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ROHM Semicon Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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2SAR512PFRAT100

ROHM Semicon · Bipolar (BJT) · SOT-89-3L

2SAR512PFRAT100 from ROHM Semicon, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; with IC/IB = -700mA/-35mA, VCE(sat) is -400mV max, and VEBO is limited to -6V.
2 C passive Collector of the PNP transistor; VCEO is -30V, VCBO is -30V, and IC is -2A continuous (-4A pulsed).
3 E passive Emitter of the PNP transistor, the reference terminal for the -30V VCEO and -2A IC ratings.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO -30 V IC = -100μA 2
Collector-emitter breakdown voltage BVCEO -30 V IC = -1mA 2
Emitter-base breakdown voltage BVEBO -6 V IE = -100μA 2
Collector cut-off current ICBO -1 μA VCB = -30V 2
Emitter cut-off current IEBO -1 μA VEB = -4V 2
Collector-emitter saturation voltage VCE(sat) -200 -400 mV IC = -700mA, IB = -35mA, pulsed 2
DC current gain hFE 200 500 VCE = -2V, IC = -100mA 2
Collector-base voltage VCBO -30 V Ta = 25°C 2
Collector-emitter voltage VCEO -30 V Ta = 25°C 2
Emitter-base voltage VEBO -6 V Ta = 25°C 2
Collector current IC -2 A Ta = 25°C 2
Collector current (pulse) ICP -4 A Pw=10ms, Single pulse 2
Power dissipation (reference land) PD 0.5 W Each terminal mounted on a reference land 2
Power dissipation (ceramic board) PD 2 W Mounted on a ceramic board (40×40×0.7mm) 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2
Transition frequency fT 430 MHz VCE = -10V, IE = 100mA, f = 100MHz, pulsed 2
Output capacitance Cob 15 pF VCB = -10V, IE = 0A, f = 1MHz 2
Turn-On time ton 30 ns IC = -1A, IB1 = -100mA, IB2 = 100mA, VCC ⋍ -10V, RL = 10Ω 2
Storage time tstg 170 ns IC = -1A, IB1 = -100mA, IB2 = 100mA, VCC ⋍ -10V, RL = 10Ω 2
Fall time tf 15 ns IC = -1A, IB1 = -100mA, IB2 = 100mA, VCC ⋍ -10V, RL = 10Ω 2

CAD (KiCad official)

  • Symbol: 2SAR512PFRAT100
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3L (KiCad packages3D, STEP)
  • 3D model files: 2sar512pfrat100-etched.step / 2sar512pfrat100-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sar512pfrat100.step / 2sar512pfrat100.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (9 pp, sha256 4ae17ff9fad29571, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF