component
2SA950
Public Made by Adomby adom
Changjing Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SA950
Changjing · Bipolar Transistors - BJT · TO-92
2SA950 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-0.1 mA. |
| 2 | COLLECTOR | passive | Collector of the PNP transistor; collector-emitter breakdown voltage is -30 V minimum at IC=-10 mA and collector power dissipation is 600 mW. |
| 3 | BASE | passive | Base of the PNP transistor; collector-base breakdown voltage V(BR)CBO is -35 V minimum at IC=-0.1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -35 | V | IC= -0.1mA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -30 | V | IC= -10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -0.1mA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCB= -35V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | µA | VEB= -5V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 100 | 320 | VCE=-1V, IC=-100mA | 2 | ||
| DC current gain | hFE(2) | 35 | VCE=-1V, IC= -700mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.7 | V | IC= -500mA, IB= -20mA | 2 | ||
| Emitter-base voltage | VBE | -0.5 | -0.8 | V | VCE=-1V, IC=-10mA | 2 | |
| Collector Output Capacitance | Cob | 19 | pF | VCB=-10V, IE=0, f=1MHz | 2 | ||
| Transition frequency | fT | 120 | MHz | VCE=-5V, IC=-10mA | 2 | ||
| Collector-Emitter Voltage | VCEO | -30 | V | 1 | |||
| Collector Power Dissipation | PC | 600 | mW | 1 |
CAD (KiCad official)
- Symbol:
2SA950 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
2sa950-etched.step/2sa950-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa950.step/2sa950.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
40332307412d4ab0, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SA950
**Changjing** · Bipolar Transistors - BJT · TO-92
2SA950 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-0.1 mA. |
| 2 | COLLECTOR | passive | Collector of the PNP transistor; collector-emitter breakdown voltage is -30 V minimum at IC=-10 mA and collector power dissipation is 600 mW. |
| 3 | BASE | passive | Base of the PNP transistor; collector-base breakdown voltage V(BR)CBO is -35 V minimum at IC=-0.1 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | | | -35 | V | IC= -0.1mA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | | | -30 | V | IC= -10mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | | | -5 | V | IE= -0.1mA, IC=0 | 2 |
| Collector cut-off current | ICBO | | | -0.1 | µA | VCB= -35V, IE=0 | 2 |
| Emitter cut-off current | IEBO | | | -0.1 | µA | VEB= -5V, IC=0 | 2 |
| DC current gain | hFE(1) | 100 | | 320 | | VCE=-1V, IC=-100mA | 2 |
| DC current gain | hFE(2) | 35 | | | | VCE=-1V, IC= -700mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.7 | V | IC= -500mA, IB= -20mA | 2 |
| Emitter-base voltage | VBE | -0.5 | | -0.8 | V | VCE=-1V, IC=-10mA | 2 |
| Collector Output Capacitance | Cob | | 19 | | pF | VCB=-10V, IE=0, f=1MHz | 2 |
| Transition frequency | fT | | 120 | | MHz | VCE=-5V, IC=-10mA | 2 |
| Collector-Emitter Voltage | VCEO | | | -30 | V | | 1 |
| Collector Power Dissipation | PC | | | 600 | mW | | 1 |
## CAD (KiCad official)
- Symbol: `2SA950`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `2sa950-etched.step` / `2sa950-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa950.step` / `2sa950.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/2sa950-datasheet.pdf) (5 pp, sha256 `40332307412d4ab0`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sa950-datasheet.pdf)