# 2SA812G

**Galaxy** · Bipolar Transistors - BJT · SOT-23

2SA812G from Galaxy, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base. Control terminal of the PNP BJT; VBE ≈ -0.62V typ. at IC=-1mA, VCE=-6V. Emitter-base breakdown VEBO = -5V. |
| 2 | E | passive | Emitter. Common terminal for the PNP; conducts IC+IB (up to ~100mA continuous). Reference for VBE and VCE. |
| 3 | C | passive | Collector. VCEO = -50V max, VCBO = -60V max, IC = -100mA continuous, PC = 200mW at Ta=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Galaxy |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Ordering variants

Same part, different packaging or reel option.

- `2SA812G`
- `2SA812GG`

## CAD (KiCad official)

- Symbol: `2SA812G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2sa812g-etched.step` / `2sa812g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa812g.step` / `2sa812g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Galaxy datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884542321274880) (4 pp, sha256 `0ca13079674b75aa`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sa812g-datasheet.pdf)