component
2SA812 M7
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA812 M7
Changjing · Bipolar (BJT) · SOT-23
2SA812 M7 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives the base-emitter voltage VBE of -0.58 to -0.68 V at IC=-1 mA, VCE=-6 V, and emitter-base breakdown VEBO of -5 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-100 µA, and VEBO is -5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the absolute maximum ratings give VCBO of -60 V, VCEO of -50 V, and collector current IC of -100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC= -1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=- 60 V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB= -5V, IC=0 | 1 | ||
| DC current gain (M7 rank) | hFE | 300 | 600 | VCE=- 6V, IC= -1mA; rank M7 range 300-600 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-100mA, IB= -10mA | 1 | ||
| Base-emitter voltage | VBE | -0.58 | -0.68 | V | IC=-1mA, VCE=-6V | 1 | |
| Transition frequency | fT | 180 | MHz | VCE=-6V, IC= -10mA | 1 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=-10V, IE=0, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -100 | mA | 1 | |||
| Collector power dissipation | PC | 200 | mW | Ta=25℃ unless otherwise noted | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SA812 M7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sa812-m7-etched.step/2sa812-m7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa812-m7.step/2sa812-m7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
265be6e0fe67de14, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).