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2SA2202-TD-E

Public Made by Adom

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onsemi Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA2202-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89

2SA2202-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base; the datasheet's Electrical Connection lists pin 1 as Base, with VEBO limited to -7 V and IB to -400 mA.
2 C passive Collector; the datasheet lists pin 2 as Collector, with VCEO of -100 V and IC of -2 A (-3 A pulse).
3 E passive Emitter; the datasheet lists pin 3 as Emitter of the PNP transistor.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO -100 V Ta=25°C 1
Collector to Emitter Voltage VCES -100 V Ta=25°C 1
Emitter to Base Voltage VEBO -7 V Ta=25°C 1
Collector Current IC -2 A Ta=25°C 1
Collector Current (Pulse) ICP -3 A Ta=25°C 1
Base Current IB -400 mA Ta=25°C 2
Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Collector Dissipation PC 3.5 W Tc=25°C 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2
Collector Cutoff Current ICBO -1 μA VCB=--80V, IE=0A 2
Emitter Cutoff Current IEBO -1 μA VEB=--4V, IC=0A 2
DC Current Gain hFE 200 400 VCE=--5V, IC=--100mA 2
Gain-Bandwidth Product fT 300 MHz VCE=--10V, IC=--500mA 2
Output Capacitance Cob 23 pF VCB=--10V, f=1MHz 2
Collector to Emitter Saturation Voltage VCE(sat) -120 -240 mV IC=--1A, IB=--100mA 2
Base to Emitter Saturation Voltage VBE(sat) -0.85 -1.2 V IC=--1A, IB=--100mA 2
Collector to Base Breakdown Voltage V(BR)CBO -100 V IC=--10μA, IE=0A 2
Collector to Emitter Breakdown Voltage V(BR)CES -100 V IC=--100μA, RBE=0Ω 2
Emitter to Base Breakdown Voltage V(BR)EBO -7 V IE=--10μA, IC=0A 2
Turn-ON Time ton 40 ns See specified Test Circuit. 2
Storage Time tstg 600 ns See specified Test Circuit. 2
Fall Time tf 30 ns See specified Test Circuit. 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB --400 mA Collector Dissipation PC 2

CAD (KiCad official)

  • Symbol: 2SA2202-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sa2202-td-e-etched.step / 2sa2202-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa2202-td-e.step / 2sa2202-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 e9605b8823a9f169, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF