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2SA2125-TD-H

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA2125-TD-H

onsemi · Bipolar Transistors - BJT · SOT-89-3

2SA2125-TD-H from onsemi, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the PNP transistor; VEBO max (--)6 V and base current IB max (--)600 mA.
2 Collector passive Collector; VCEO max (--)50 V, IC max (--)3 A (6 A pulse), also connected to the PCP tab/heat-sinking pad.
3 Emitter passive Emitter of the PNP transistor; VEBO max (--)6 V relative to base.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO -50 V Ta=25°C 1
Collector to Emitter Voltage VCES -50 V Ta=25°C 1
Emitter to Base Voltage VEBO -6 V Ta=25°C 1
Collector Current IC -3 A Ta=25°C 2
Collector Current (Pulse) ICP -6 A Ta=25°C 2
Base Current IB -600 mA Ta=25°C 2
Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Collector Dissipation PC 3.5 W Tc=25°C 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2
Collector Cutoff Current ICBO -1 μA VCB=(--)40V, IE=0A 2
Emitter Cutoff Current IEBO -1 μA VEB=(--)4V, IC=0A 2
DC Current Gain hFE 200 560 VCE=(--)2V, IC=(--)100mA 2
Collector to Emitter Breakdown Voltage V(BR)CES -50 V IC=(--)100μA, RBE=0Ω 2
Collector to Base Breakdown Voltage V(BR)CBO -50 V IC=(--)10μA, IE=0A 2
Emitter to Base Breakdown Voltage V(BR)EBO -6 V IE=(--)10μA, IC=0A 2
Collector to Emitter Saturation Voltage 1 VCE(sat)1 -125 -230 mV IC=(--)1A, IB=(--)50mA 2
Collector to Emitter Saturation Voltage 2 VCE(sat)2 -250 -500 mV IC=(--)2A, IB=(--)100mA 2
Base to Emitter Saturation Voltage VBE(sat) -0.94 -1.2 V IC=(--)2A, IB=(--)100mA 2
Gain-Bandwidth Product fT 390 MHz VCE=(--)10V, IC=(--)500mA 2
Output Capacitance Cob 24 pF VCB=(--)10V, f=1MHz 2
Turn-ON Time ton 30 ns See specified Test Circuit 2
Storage Time tstg 230 ns See specified Test Circuit 2
Fall Time tf 18 ns See specified Test Circuit 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB (--)600 mA Collector Dissipation PC 2

CAD (KiCad official)

  • Symbol: 2SA2125-TD-H
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: 2sa2125-td-h-etched.step / 2sa2125-td-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa2125-td-h.step / 2sa2125-td-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 5f2b0485e1f41a93, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF