component
2SA2097
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sa2097-etched.glb | 6d ago |
| 2sa2097-etched.step | 6d ago |
| 2sa2097-hero.glb | 6d ago |
| 2sa2097-hero.overlay.json | 6d ago |
| 2sa2097.glb | 6d ago |
| 2sa2097.kicad_mod | 6d ago |
| 2sa2097.kicad_sym | 6d ago |
| 2sa2097.lbr | 6d ago |
| 2sa2097.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SA2097
TOSHIBA · Bipolar (BJT) · TO-252
2SA2097 from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; base current IB is rated at -0.5 A max and VEBO is -7 V. |
| 2 | Collector | passive | Collector, connected to the heatsink tab; VCEO is -50 V, VCBO is -50 V, and IC is -5 A DC (-10 A pulsed). |
| 3 | Emitter | passive | Emitter of the PNP transistor; VEBO is -7 V max with respect to the base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (hFE(1)) | hFE(1) | 200 | 500 | VCE = -2 V, IC = -0.5 A | 2 | ||
| DC current gain (hFE(2)) | hFE(2) | 100 | VCE = -2 V, IC = -1.6 A | 2 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC = -10 mA, IB = 0 | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.27 | V | IC = -1.6 A, IB = -53 mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC = -1.6 A, IB = -53 mA | 2 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -50 V, IE = 0 | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -7 V, IC = 0 | 2 | ||
| Collector-base voltage | VCBO | -50 | V | Ta = 25°C (as printed in Absolute Maximum Ratings) | 1 | ||
| Collector-emitter voltage | VCEO | -50 | V | Ta = 25°C (as printed in Absolute Maximum Ratings) | 1 | ||
| Emitter-base voltage | VEBO | -7 | V | Ta = 25°C (as printed in Absolute Maximum Ratings) | 1 | ||
| Collector current DC | IC | -5 | A | DC | 1 | ||
| Collector current pulse | ICP | -10 | A | Pulse | 1 | ||
| Base current | IB | -0.5 | A | 1 | |||
| Collector power dissipation | PC | 1 | W | Ta = 25°C | 1 | ||
| Collector power dissipation | PC | 20 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SA2097 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sa2097-etched.step/2sa2097-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa2097.step/2sa2097.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
cb8c1105024933a2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).