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2SA2016G-AB3-R

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UTC(Unisonic Tech) Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA2016G-AB3-R

UTC(Unisonic Tech) · Bipolar Transistors - BJT · SOT-89

2SA2016G-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP transistor; the absolute maximum base current is -1.2 A (IB).
2 C passive Collector terminal of the PNP transistor; the absolute maximum collector current is -7 A continuous and -10 A pulsed (ICP), with collector-base and collector-emitter voltages of -50 V.
3 E passive Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage is -6 V (VEBO).

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-to-Base Breakdown Voltage BVCBO -50 V IC= -10µA, IE=0 2
Collector-to-Emitter Breakdown Voltage BVCEO -50 V IC= -1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage BVEBO -6 V IC=0, IE= -10µA 2
Collector Cut-Off Current ICBO -0.1 µA VCB= -40V, IE=0 2
Emitter Cut-Off Current IEBO -0.1 µA VEB= -4V, IC=0 2
DC Current Gain hFE 200 560 VCE= -2V, IC= -500mA 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.23 -0.39 V IC= -3.5A, IB= -175mA 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.24 -0.4 V IC= -2A, IB= -40mA 2
Base-Emitter Saturation Voltage VBE(SAT) -0.83 -1.2 V IC= -2A, IB= -40mA 2
Gain Bandwidth Product fT 290 MHz VCE= -10V, IC= -500mA 2
Output Capacitance Cob 50 pF VCB= -10V, f=1MHz 2
Turn-on Time tON 40 ns See specified Test Circuit 2
Storage Time tSTG 225 ns See specified Test Circuit 2
Fall Time tF 25 ns See specified Test Circuit 2
Collector-Base Voltage VCBO -50 V TA=25°C 2
Collector-Emitter Voltage VCEO -50 V TA=25°C 2
Emitter-Base Voltage VEBO -6 V TA=25°C 2
Collector Dissipation (SOT-89, mounted on ceramic board 250mm2*0.8mm) PC 1.3 W Mounted on SOT-89 ceramic board (250mm2*0.8mm), TA=25°C 2
Collector Dissipation (SOT-89) PC 3.5 W TC=25C 2
Collector Current IC -7 A TA=25°C 2
Collector Current (pulse) ICP -10 A TA=25°C 2
Base Current IB -1.2 A TA=25°C 2
Junction Temperature TJ 150 C TA=25°C 2
Storage Temperature TSTG -55 150 C 2
Junction to Ambient (SOT-89) θJA 96.2 °C/W SOT-89 2
Junction to Case (SOT-89) θJC 35.7 °C/W SOT-89 2

CAD (KiCad official)

  • Symbol: 2SA2016G-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sa2016g-ab3-r-etched.step / 2sa2016g-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa2016g-ab3-r.step / 2sa2016g-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (6 pp, sha256 2fa0e8ff8b203cf6, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF