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2SA2013-TD-E

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA2013-TD-E

onsemi · Bipolar (BJT) · SOT-89

2SA2013-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; base current IB is rated (--)600 mA.
2 Collector passive Collector terminal; collector current IC is rated (--)4 A continuous and (--)7 A pulsed (ICP), with VCEO of (--)50 V.
3 Emitter passive Emitter terminal; emitter-to-base voltage VEBO is rated (--)6 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO -1 μA VCB=(--)40V, IE=0A 2
Emitter Cutoff Current IEBO -1 μA VEB=(--)4V, IC=0A 2
DC Current Gain hFE 200 560 VCE=(--)2V, IC=(--)500mA 2
Gain-Bandwidth Product fT 360 MHz VCE=(--)10V, IC=(--)500mA 2
Output Capacitance Cob 24 pF VCB=(--)10V, f=1MHz 2
Collector-to-Emitter Saturation Voltage VCE(sat)1 -105 -180 mV IC=(--)1A, IB=(--)50mA 2
Collector-to-Emitter Saturation Voltage VCE(sat)2 -200 -340 mV IC=(--)2A, IB=(--)100mA 2
Base-to-Emitter Saturation Voltage VBE(sat) -0.89 -1.2 V IC=(--)2A, IB=(--)100mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO -50 V IC=(--)10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CES -50 V IC=(--)100μA, RBE=0Ω 2
Emitter-to-Base Breakdown Voltage V(BR)EBO -6 V IE=(--)10μA, IC=0A 2
Turn-ON Time ton 30 ns See specified Test Circuit. 2
Storage Time tstg 230 ns See specified Test Circuit. 2
Fall Time tf 15 ns See specified Test Circuit. 2
Collector-to-Base Voltage VCBO -50 V 1
Collector-to-Emitter Voltage VCES -50 V 1
Emitter-to-Base Voltage VEBO -6 V 1
Collector Current IC -4 A 2
Collector Current (Pulse) ICP -7 A 2
Base Current IB -600 mA 2
Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Collector Dissipation PC 3.5 W Tc=25°C 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB (--)600 mA Collector Dissipation PC 2

CAD (KiCad official)

  • Symbol: 2SA2013-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sa2013-td-e-etched.step / 2sa2013-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa2013-td-e.step / 2sa2013-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 cd984cd999f5f358, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF