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2SA1952

Public Made by Adom

by adom

Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA1952

Changjing · Bipolar (BJT) · TO-252-2L

2SA1952 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; base-emitter saturation voltage is specified at IC=-3A with IB=-0.15A (-1.2 V max) and at IC=-4A with IB=-0.2A (-1.5 V max).
2 COLLECTOR passive Collector terminal; rated at -100 V collector-base voltage (VCBO), -60 V collector-emitter voltage (VCEO) and -5 A collector current (IC).
3 EMITTER passive Emitter terminal; rated at -5 V emitter-base voltage (VEBO).

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -100 V IC=-50μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-50μA,IC=0 2
Collector cut-off current ICBO -10 μA VCB=-100V,IE=0 2
Emitter cut-off current IEBO -10 μA VEB=-5V,IC=0 2
DC current gain hFE(1) hFE(1) 120 270 VCE=-2V, IC=-1A 2
DC current gain hFE(2) hFE(2) 40 VCE=-2V, IC=-3A 2
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-3A,IB=-0.15A 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-4A,IB=-0.2A 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC=-3A,IB=-0.15A 2
Base-emitter saturation voltage VBE(sat) -1.5 V IC=-4A,IB=-0.2A 2
Transition frequency fT 80 MHz VCE=-10V,IC=-0.5A, f=30MHz 2
Collector output capacitance Cob 130 pF VCB=-10V,IE=0, f=1MHz 2
Turn-on time ton 0.3 μs VCC=-30V, IC=-3A,IB1=-IB2=150mA 2
Storage time tS 1.5 μs VCC=-30V, IC=-3A,IB1=-IB2=150mA 2
Fall time tf 0.3 μs VCC=-30V, IC=-3A,IB1=-IB2=150mA 2
Collector-emitter voltage VCEO -60 V 1
Collector-base voltage VCBO -100 V 1
Emitter-base voltage VEBO -5 V 1
Collector current IC -5 A 1
Collector power dissipation PC 1 W Mounted on a substrate 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 125 ℃/W 1

CAD (KiCad official)

  • Symbol: 2SA1952
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: 2sa1952-etched.step / 2sa1952-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1952.step / 2sa1952.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 7da70c325de1dc58, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF