component
2SA1797T100Q
Public Made by Adomby adom
ROHM Semicon Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SA1797T100Q
ROHM Semicon · Bipolar Transistors - BJT · SOT-89
2SA1797T100Q from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the transistor; the datasheet gives emitter-base breakdown BVEBO of -6V minimum and tests IEBO at VEB=-5V. |
| 2 | Collector | passive | Collector terminal rated for -50V VCEO and -3A DC collector current (-6A pulse, single pulse Pw=10ms), with 0.5W collector power dissipation. |
| 3 | Emitter | passive | Emitter terminal; the emitter-base voltage VEBO is rated -6V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | -0.35 | V | IC/IB=-1A/-50mA; pulse measurement | 1 | ||
| Collector cutoff current | ICBO | -0.1 | µA | VCB=-50V | 1 | ||
| Emitter cutoff current | IEBO | -0.1 | µA | VEB=-5V | 1 | ||
| Collector-base breakdown voltage | BVCBO | -50 | V | IC=-50µA | 1 | ||
| Collector-emitter breakdown voltage | BVCEO | -50 | V | IC=-1mA | 1 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE=-50µA | 1 | ||
| DC current transfer ratio | hFE2 | 45 | VCE/IC=-2V/-1.5A | 1 | |||
| DC current transfer ratio | hFE1 | 82 | 270 | VCE/IC=-2V/-0.5A | 1 | ||
| Transition frequency | fT | 200 | MHz | VCE=-2V, IE=0.5A, f=100MHz | 1 | ||
| Output capacitance | Cob | 36 | pF | VCB=-10V, IE=0A, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | -50 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | -50 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | -6 | V | Ta=25°C | 1 | ||
| Collector current (DC) | IC | -3 | A | Ta=25°C, DC | 1 | ||
| Collector current (pulse) | ICP | -6 | A | Single pulse, Pw=10ms | 1 | ||
| Collector power dissipation | PC | 0.5 | W | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 2 | W | When mounted on a 40×40×0.7mm ceramic board | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SA1797T100Q - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sa1797t100q-etched.step/2sa1797t100q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1797t100q.step/2sa1797t100q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (3 pp, sha256
1944628e74ea9475, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SA1797T100Q
**ROHM Semicon** · Bipolar Transistors - BJT · SOT-89
2SA1797T100Q from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the transistor; the datasheet gives emitter-base breakdown BVEBO of -6V minimum and tests IEBO at VEB=-5V. |
| 2 | Collector | passive | Collector terminal rated for -50V VCEO and -3A DC collector current (-6A pulse, single pulse Pw=10ms), with 0.5W collector power dissipation. |
| 3 | Emitter | passive | Emitter terminal; the emitter-base voltage VEBO is rated -6V maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | | | -0.35 | V | IC/IB=-1A/-50mA; pulse measurement | 1 |
| Collector cutoff current | ICBO | | | -0.1 | µA | VCB=-50V | 1 |
| Emitter cutoff current | IEBO | | | -0.1 | µA | VEB=-5V | 1 |
| Collector-base breakdown voltage | BVCBO | -50 | | | V | IC=-50µA | 1 |
| Collector-emitter breakdown voltage | BVCEO | -50 | | | V | IC=-1mA | 1 |
| Emitter-base breakdown voltage | BVEBO | -6 | | | V | IE=-50µA | 1 |
| DC current transfer ratio | hFE2 | 45 | | | | VCE/IC=-2V/-1.5A | 1 |
| DC current transfer ratio | hFE1 | 82 | | 270 | | VCE/IC=-2V/-0.5A | 1 |
| Transition frequency | fT | | 200 | | MHz | VCE=-2V, IE=0.5A, f=100MHz | 1 |
| Output capacitance | Cob | | 36 | | pF | VCB=-10V, IE=0A, f=1MHz | 1 |
| Collector-base voltage | VCBO | | | -50 | V | Ta=25°C | 1 |
| Collector-emitter voltage | VCEO | | | -50 | V | Ta=25°C | 1 |
| Emitter-base voltage | VEBO | | | -6 | V | Ta=25°C | 1 |
| Collector current (DC) | IC | | | -3 | A | Ta=25°C, DC | 1 |
| Collector current (pulse) | ICP | | | -6 | A | Single pulse, Pw=10ms | 1 |
| Collector power dissipation | PC | | | 0.5 | W | Ta=25°C | 1 |
| Collector power dissipation | PC | | | 2 | W | When mounted on a 40×40×0.7mm ceramic board | 1 |
| Junction temperature | Tj | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `2SA1797T100Q`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sa1797t100q-etched.step` / `2sa1797t100q-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa1797t100q.step` / `2sa1797t100q.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](docs/2sa1797t100q-datasheet.pdf) (3 pp, sha256 `1944628e74ea9475`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sa1797t100q-datasheet.pdf)