component
2SA1721-O
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| 2sa1721-o-etched.glb | 7d ago |
| 2sa1721-o-etched.step | 7d ago |
| 2sa1721-o-hero.glb | 7d ago |
| 2sa1721-o-hero.overlay.json | 7d ago |
| 2sa1721-o.glb | 7d ago |
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| 2sa1721-o.lbr | 7d ago |
| 2sa1721-o.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
2SA1721-O
TOSHIBA · Bipolar (BJT) · SOT-23
2SA1721-O from TOSHIBA, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal; emitter-base voltage limited to -5 V and base current to -20 mA maximum. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; collector-emitter voltage rating is -300 V. |
| 3 | COLLECTOR | passive | Collector terminal; collector current up to -100 mA, collector-base voltage -300 V, power dissipation 150 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | -0.1 | μA | VCB = −300 V, IE = 0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB = −5 V, IC = 0 | 2 | ||
| Collector-base breakdown voltage | V (BR) CBO | -300 | V | IC = −0.1 mA, IE = −0 | 2 | ||
| Collector-emitter breakdown voltage | V (BR) CEO | -300 | V | IC = −1 mA, IB = −0 | 2 | ||
| DC current gain, O classification | hFE (1) | 50 | 150 | VCE = −10 V, IC = −20 mA; O-grade range per note | 2 | ||
| DC current gain | hFE (2) | 20 | VCE = −10 V, IC = −1 mA | 2 | |||
| Collector-emitter saturation voltage | VCE (sat) | -0.5 | V | IC = −20 mA, IB = −2 mA | 2 | ||
| Base-emitter saturation voltage | VBE (sat) | -1.2 | V | IC = −20 mA, IB = −2 mA | 2 | ||
| Transition frequency | fT | 50 | 55 | MHz | VCE = −10 V, IC = −20 mA | 2 | |
| Collector output capacitance | Cob | 5.5 | 6 | pF | VCB = −20 V, IE = 0, f = 1 MHz | 2 | |
| Collector-base voltage | VCBO | -300 | V | 1 | |||
| Collector-emitter voltage | VCEO | -300 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -100 | mA | 1 | |||
| Base current | IB | -20 | mA | 1 | |||
| Collector power dissipation | PC | 150 | mW | 1 | |||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Base current IB −20 mA Collector power dissipation PC 150 mW | 1 |
CAD (KiCad official)
- Symbol:
2SA1721-O - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sa1721-o-etched.step/2sa1721-o-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1721-o.step/2sa1721-o.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
823f1dd837fc60f0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).