component
2SA1661
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sa1661-etched.glb | 6d ago |
| 2sa1661-etched.step | 6d ago |
| 2sa1661-hero.glb | 6d ago |
| 2sa1661-hero.overlay.json | 6d ago |
| 2sa1661.glb | 6d ago |
| 2sa1661.kicad_mod | 6d ago |
| 2sa1661.kicad_sym | 6d ago |
| 2sa1661.lbr | 6d ago |
| 2sa1661.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SA1661
Changjing · Bipolar (BJT) · SOT-89-3L
2SA1661 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet's emitter-base breakdown limit is V(BR)EBO -5 V with IE=-1mA. |
| 2 | COLLECTOR | passive | Collector terminal of the PNP transistor; absolute maximum ratings are VCBO -120 V, VCEO -120 V and IC -0.8 A. |
| 3 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet's emitter-base breakdown limit is V(BR)EBO -5 V with IC=0. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -120 | V | IC= -1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -120 | V | IC=-10mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-1mA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-120V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-5V,IC=0 | 1 | ||
| DC current gain | hFE | 80 | 240 | VCE=-5V, IC=-100mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -1 | V | IC=-500mA,IB=-50mA | 1 | ||
| Base-emitter voltage | VBE | -1 | V | VCE=-5V, IC=-500mA | 1 | ||
| Collector output capacitance | Cob | 30 | pF | VCB=-10V,IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE=-5V,IC=-0.1A, f=30MHz | 1 | ||
| Collector-base voltage | VCBO | -120 | V | 1 | |||
| Collector-emitter voltage | VCEO | -120 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -0.8 | A | 1 | |||
| Collector power dissipation | PC | 500 | mW | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SA1661 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
2sa1661-etched.step/2sa1661-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1661.step/2sa1661.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
91e42c25bed50c40, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).