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2SA1418S-TD-E

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onsemi Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA1418S-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89

2SA1418S-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal; the emitter-to-base voltage rating VEBO is (--)6 V.
2 Collector passive Collector terminal; rated at (--)160 V VCEO, (--)0.7 A IC and (--)1.5 A pulsed ICP, with collector dissipation PC of 500 mW (1.3 W when mounted on a ceramic substrate).
3 Emitter passive Emitter terminal; the datasheet gives no emitter-only limit beyond the (--)6 V emitter-to-base rating VEBO.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO -0.1 μA VCB=(--)120V, IE=0A 2
Emitter Cutoff Current IEBO -0.1 μA VEB=(--)4V, IC=0A 2
DC Current Gain hFE1 100 400 VCE=(--)5V, IC=(--)100mA 2
DC Current Gain hFE2 90 VCE=(--)5V, IC=(--)10mA 2
Collector-to-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V IC=(--)250mA, IB=(--)25mA 2
Base-to-Emitter Saturation Voltage VBE(sat) -0.85 -1.2 V IC=(--)250mA, IB=(--)25mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO -180 V IC=(--)10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO -160 V IC=(--)1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO -6 V IE=(--)10μA, IC=0A 2
Collector-to-Base Voltage VCBO -180 V 1
Collector-to-Emitter Voltage VCEO -160 V 1
Emitter-to-Base Voltage VEBO -6 V 1
Collector Current IC -0.7 A 1
Collector Current (Pulse) ICP -1.5 A 1
Collector Dissipation PC 500 mW 2
Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2
Gain-Bandwidth Product fT 120 MHz VCE=(--)10V, IC=(--)50mA 2
Output Capacitance Cob 11 pF VCB=(--)10V, f=1MHz 2
Turn-ON Time ton 60 ns See specified Test Circuit. 2
Storage Time tstg 900 ns See specified Test Circuit. 2
Fall Time tf 60 ns See specified Test Circuit. 2

CAD (KiCad official)

  • Symbol: 2SA1418S-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sa1418s-td-e-etched.step / 2sa1418s-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1418s-td-e.step / 2sa1418s-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 c04ce2802ce0b7d7, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF