component
2SA1417-R
Public Made by Adomby adom
YFW Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| 2sa1417-r-etched.glb | 2d ago |
| 2sa1417-r-etched.step | 2d ago |
| 2sa1417-r-hero.glb | 2d ago |
| 2sa1417-r-hero.overlay.json | 2d ago |
| 2sa1417-r.glb | 2d ago |
| 2sa1417-r.kicad_mod | 2d ago |
| 2sa1417-r.kicad_sym | 2d ago |
| 2sa1417-r.lbr | 2d ago |
| 2sa1417-r.step | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| README.md | 2d ago |
2SA1417-R
YFW · Bipolar Transistors - BJT · SOT-89
2SA1417-R from YFW, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; limits are emitter-base breakdown BVEBO -6 V and DC current gain hFE 100-400 (R grade 100-200) at VCE=-5 V, IC=-100 mA. |
| 2 | C | passive | Collector of the PNP transistor; rated BVCBO -120 V, BVCEO -100 V, IC -2 A continuous and -3 A pulsed, with 500 mW collector power dissipation. |
| 3 | E | passive | Emitter of the PNP transistor; emitter-base breakdown BVEBO is -6 V and emitter cut-off current IEBO is at most -100 nA at VEB=-4 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -120 | V | IC = -100μA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | BVCEO | -100 | V | IC = -1mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -100μA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -100V, IE = 0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -4V, IC = 0 | 1 | ||
| DC current gain (class R) | hFE | 100 | 200 | VCE = -5V, IC = -100mA; class R range 100-200 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC = -1A, IB = -100mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC = -1A, IB = -100mA | 1 | ||
| Collector output capacitance | Cob | 25 | pF | VCB = -10V, IE = 0, F = 1MHz | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE = -10V, IB = -100mA | 1 | ||
| Collector-base voltage | BVCBO | -120 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | BVCEO | -100 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | BVEBO | -6 | V | Ta=25℃ | 1 | ||
| Collector current | IC | -2 | A | Ta=25℃ | 1 | ||
| Collector current (pulse) | ICP | -3 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 500 | mW | Ta=25℃ | 1 | ||
| Junction temperature | Tj | 150 | °C | Ta=25℃ | 1 | ||
| Storage temperature | Tstg | -55 | 150 | °C | Ta=25℃ | 1 |
CAD (KiCad official)
- Symbol:
2SA1417-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sa1417-r-etched.step/2sa1417-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1417-r.step/2sa1417-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (3 pp, sha256
14503d6823768152, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).