component
2SA1235A
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sa1235a-etched.glb | 6d ago |
| 2sa1235a-etched.step | 6d ago |
| 2sa1235a-hero.glb | 6d ago |
| 2sa1235a-hero.overlay.json | 6d ago |
| 2sa1235a.glb | 6d ago |
| 2sa1235a.kicad_mod | 6d ago |
| 2sa1235a.kicad_sym | 6d ago |
| 2sa1235a.lbr | 6d ago |
| 2sa1235a.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SA1235A
Changjing · Bipolar (BJT) · SOT-23
2SA1235A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; emitter-base reverse breakdown is rated at -6 V (VEBO) and base drive is specified at IB = -10 mA for saturation at IC = -100 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; emitter-base voltage is limited to -6 V (VEBO) and emitter current is bounded by the -200 mA collector current rating. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated for collector-emitter voltage of -50 V (VCEO), collector-base voltage of -60 V (VCBO), and collector current of -200 mA (IC). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-0.1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-6V, IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 150 | 500 | VCE=-6V, IC=-1mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 90 | VCE=-6V, IC=-0.1mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-100mA, IB=-10mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-100mA, IB=-10mA | 1 | ||
| Transition frequency | fT | 200 | MHz | VCE=-6V, IC=-10mA | 1 | ||
| Collector output capacitance | Cob | 4 | pF | VCB=-6V, IE=0, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -6 | V | 1 | |||
| Collector current | IC | -200 | mA | 1 | |||
| Collector power dissipation | PC | 200 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SA1235A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sa1235a-etched.step/2sa1235a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1235a.step/2sa1235a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
82271c183645691f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).