component

2SA1213SQ-Y

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA1213SQ-Y

PJSEMI · Bipolar (BJT) · SOT-89

2SA1213SQ-Y from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the datasheet gives emitter-base voltage -VEBO of 5 V max and emitter-base cutoff current of 100 nA max at VEB = -5 V.
2 Collector passive Collector terminal; absolute maximum ratings are collector-base voltage -VCBO 50 V, collector-emitter voltage -VCEO 50 V, and collector current -IC 2 A.
3 Emitter passive Emitter terminal; the datasheet gives emitter-base breakdown voltage V(BR)EBO of 5 V min at IE = -100 μA, and maximum power dissipation PD of 0.5 W for the device.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC current gain, Group Y HFE 120 240 at VCE = -2 V, IC = -500 mA 2
DC current gain (2 A row) HFE 20 at VCE = -2 V, IC = -2 A 2
Collector base cutoff current -ICBO 100 nA at VCB = -50 V 2
Emitter base cutoff current -IEBO 100 nA at VEB = -5 V 2
Collector base breakdown voltage -V(BR)CBO 50 V at IC = -100 μA 2
Collector emitter breakdown voltage -V(BR)CEO 50 V at IC = -1 mA 2
Emitter base breakdown voltage -V(BR)EBO 5 V at IE = -100 μA 2
Collector emitter saturation voltage -VCE(sat) 0.5 V at IC = -1 A, IB = -50 mA 2
Base emitter saturation voltage -VBE(sat) 1.2 V at IC = -1 A, IB = -50 mA 2
Transition frequency FT 100 MHz at VCE = -2 V, IC = -500 mA 2
Output capacitance Cob 40 pF at VCB = -10 V, IE = 0, f = 1MHz 2
Collector base voltage -VCBO 50 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Collector emitter voltage -VCEO 50 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Emitter base voltage -VEBO 5 V Ratings at 25℃ ambient temperature unless otherwise specified 1
Collector current -IC 2 A Ratings at 25℃ ambient temperature unless otherwise specified 1
Maximum power dissipation PD 0.5 W Ratings at 25℃ ambient temperature unless otherwise specified 1
Junction temperature TJ 150 ℃ 1
Storage temperature range TSTG -55 150 ℃ 1
Thermal resistance junction to ambient RθJA 250 ℃/W 1

CAD (KiCad official)

  • Symbol: 2SA1213SQ-Y
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sa1213sq-y-etched.step / 2sa1213sq-y-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1213sq-y.step / 2sa1213sq-y.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 d3089caee2436bd6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF