component
2SA1182-Y
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SA1182-Y
TOSHIBA · Bipolar (BJT) · TO-236-3(SOT-23-3)
2SA1182-Y from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; the datasheet limits emitter-base voltage VEBO to -5 V and base current IB to -50 mA. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; the datasheet limits VEBO to -5 V. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; the datasheet gives VCBO of -35 V, VCEO of -30 V and IC of -500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | 0.1 | A | VCB = 35 V, IE = 0 A | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | A | VEB = 5 V, IC = 0 A | 2 | ||
| DC current gain | hFE (1) | 70 | 400 | VCE = 1 V, IC = 100 mA | 2 | ||
| DC current gain | hFE (2) | 25 | VCE = 6 V, IC = 400 mA | 2 | |||
| DC current gain, hFE(1) rank Y classification | hFE (1) | 120 | 240 | VCE = 1 V, IC = 100 mA (rank Y classification) | 2 | ||
| DC current gain, hFE(2) rank Y classification | hFE (2) | 40 | VCE = 6 V, IC = 400 mA (rank Y classification) | 2 | |||
| Collector-emitter saturation voltage | VCE (sat) | 0.1 | 0.25 | V | IC = 100 mA, IB = 10 mA | 2 | |
| Base-emitter voltage | VBE | 0.8 | 1 | V | VCE = 1 V, IC = 100 mA | 2 | |
| Transition frequency | fT | 200 | MHz | VCE = 6 V, IC = 20 mA | 2 | ||
| Collector-base voltage | VCBO | 35 | V | 1 | |||
| Collector-emitter voltage | VCEO | 30 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 500 | mA | 1 | |||
| Base current | IB | 50 | mA | 1 | |||
| Collector power dissipation | PC (Note 3) | 150 | mW | Note 3 devices (ordering part number not ending in LF(T) | 1 | ||
| Junction temperature | Tj (Note 3) | 125 | °C | Note 3 devices (ordering part number not ending in LF(T) | 1 | ||
| Storage temperature range | Tstg (Note 3) | -55 | 125 | °C | Note 3 devices (ordering part number not ending in LF(T) | 1 |
CAD (KiCad official)
- Symbol:
2SA1182-Y - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
2sa1182-y-etched.step/2sa1182-y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1182-y.step/2sa1182-y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (4 pp, sha256
c6dbba782229e817, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SA1182-Y
**TOSHIBA** · Bipolar (BJT) · TO-236-3(SOT-23-3)
2SA1182-Y from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; the datasheet limits emitter-base voltage VEBO to -5 V and base current IB to -50 mA. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; the datasheet limits VEBO to -5 V. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; the datasheet gives VCBO of -35 V, VCEO of -30 V and IC of -500 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | | | 0.1 | A | VCB = 35 V, IE = 0 A | 2 |
| Emitter cut-off current | IEBO | | | 0.1 | A | VEB = 5 V, IC = 0 A | 2 |
| DC current gain | hFE (1) | 70 | | 400 | | VCE = 1 V, IC = 100 mA | 2 |
| DC current gain | hFE (2) | 25 | | | | VCE = 6 V, IC = 400 mA | 2 |
| DC current gain, hFE(1) rank Y classification | hFE (1) | 120 | | 240 | | VCE = 1 V, IC = 100 mA (rank Y classification) | 2 |
| DC current gain, hFE(2) rank Y classification | hFE (2) | 40 | | | | VCE = 6 V, IC = 400 mA (rank Y classification) | 2 |
| Collector-emitter saturation voltage | VCE (sat) | | 0.1 | 0.25 | V | IC = 100 mA, IB = 10 mA | 2 |
| Base-emitter voltage | VBE | | 0.8 | 1 | V | VCE = 1 V, IC = 100 mA | 2 |
| Transition frequency | fT | 200 | | | MHz | VCE = 6 V, IC = 20 mA | 2 |
| Collector-base voltage | VCBO | | | 35 | V | | 1 |
| Collector-emitter voltage | VCEO | | | 30 | V | | 1 |
| Emitter-base voltage | VEBO | | | 5 | V | | 1 |
| Collector current | IC | | | 500 | mA | | 1 |
| Base current | IB | | | 50 | mA | | 1 |
| Collector power dissipation | PC (Note 3) | | | 150 | mW | Note 3 devices (ordering part number not ending in LF(T) | 1 |
| Junction temperature | Tj (Note 3) | | | 125 | °C | Note 3 devices (ordering part number not ending in LF(T) | 1 |
| Storage temperature range | Tstg (Note 3) | -55 | | 125 | °C | Note 3 devices (ordering part number not ending in LF(T) | 1 |
## CAD (KiCad official)
- Symbol: `2SA1182-Y`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files: `2sa1182-y-etched.step` / `2sa1182-y-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa1182-y.step` / `2sa1182-y.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8601060928251449344) (4 pp, sha256 `c6dbba782229e817`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sa1182-y-datasheet.pdf)