component
2SA1179
Public Made by Adomby adom
Changjing Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| 2sa1179-etched.glb | 2d ago |
| 2sa1179-etched.step | 2d ago |
| 2sa1179-hero.glb | 2d ago |
| 2sa1179-hero.overlay.json | 2d ago |
| 2sa1179.glb | 2d ago |
| 2sa1179.kicad_mod | 2d ago |
| 2sa1179.kicad_sym | 2d ago |
| 2sa1179.lbr | 2d ago |
| 2sa1179.step | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| README.md | 2d ago |
2SA1179
Changjing · Bipolar Transistors - BJT · SOT-23
2SA1179 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor, with emitter-base voltage VEBO rated at -5 V maximum. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5 V at IE=-10uA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for -150 mA continuous collector current and collector-base voltage VCBO of -55 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -55 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current -Continuous | IC | -150 | mA | 1 | |||
| Collector Power Dissipation | Pc | 200 | mW | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -55 | V | IC=-10u A,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10 u A,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | u A | VCB=-35V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | u A | VEB=-4V,IC=0 | 1 | ||
| DC current gain | hFE | 200 | 400 | VCE=-6V,IC=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-50mA,IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-50mA,IB=-5mA | 1 | ||
| Transition frequency | fT | 180 | MHz | VCE=-6V,IC=-10mA | 1 | ||
| Collector output capacitance | Cob | 4 | pF | VCB=-6V,IE=0,f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
2SA1179 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sa1179-etched.step/2sa1179-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1179.step/2sa1179.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
8ea28322b13a86b4, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).