component
2SA1162GR
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| 2sa1162gr-etched.glb | 7d ago |
| 2sa1162gr-etched.step | 7d ago |
| 2sa1162gr-hero.glb | 7d ago |
| 2sa1162gr-hero.overlay.json | 7d ago |
| 2sa1162gr.glb | 7d ago |
| 2sa1162gr.kicad_mod | 7d ago |
| 2sa1162gr.kicad_sym | 7d ago |
| 2sa1162gr.lbr | 7d ago |
| 2sa1162gr.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
2SA1162GR
Changjing · Bipolar (BJT) · SOT-23
2SA1162GR from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5 V minimum at IE=-100μA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with maximum emitter-base voltage VEBO of -5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, with maximum collector-base voltage VCBO of -50 V and collector current IC of -150 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (rank GR(G)) | hFE | 200 | 400 | VCE=-6V,IC=-2mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-100mA,IB=-10mA | 1 | ||
| Transition frequency | fT | 80 | MHz | VCE=-10V,IC=-1mA | 1 | ||
| Noise figure | NF | 10 | dB | VCE=-6V,Ic=0.1mA, f=1KHz,Rg=10KΩ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-50V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=-5V,IC=0 | 1 | ||
| Collector output capacitance | Cob | 7 | pF | VCB=-10V,IE=0,f=1MHz | 1 | ||
| Collector-base voltage (absolute maximum) | VCBO | -50 | V | 1 | |||
| Collector-emitter voltage (absolute maximum) | VCEO | -50 | V | 1 | |||
| Emitter-base voltage (absolute maximum) | VEBO | -5 | V | 1 | |||
| Collector current (absolute maximum) | IC | -150 | mA | 1 | |||
| Collector power dissipation | PC | 150 | mW | 1 | |||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 833 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SA1162GR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sa1162gr-etched.step/2sa1162gr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1162gr.step/2sa1162gr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
721cdd5c08064c4a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).