component
2SA1015G
Public Made by Adomby adom
ST(Semtech) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA1015G
ST(Semtech) · Bipolar Transistors - BJT · TO-92
2SA1015G from ST(Semtech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the PNP transistor; the datasheet gives an absolute maximum emitter-base voltage of -VEBO 5 V. |
| 2 | Collector | passive | Collector terminal; the absolute maximum ratings are a collector current of -IC 150 mA and a collector-emitter voltage of -VCEO 50 V. |
| 3 | Base | passive | Base terminal; the datasheet gives an absolute maximum base current of -IB 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST(Semtech) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain, group G (at -VCE = 6 V, -IC = 2 mA) | hFE | 200 | 400 | at -VCE = 6 V, -IC = 2 mA | 1 | ||
| DC current gain (at -VCE = 6 V, -IC = 150 mA) | hFE | 25 | at -VCE = 6 V, -IC = 150 mA | 1 | |||
| Collector base breakdown voltage | -V(BR)CBO | 50 | V | at -IC = 100 µA | 1 | ||
| Collector emitter breakdown voltage | -V(BR)CEO | 50 | V | at -IC = 10 mA | 1 | ||
| Emitter base breakdown voltage | -V(BR)EBO | 5 | V | at -IE = 10 µA | 1 | ||
| Collector base cutoff current | -ICBO | 0.1 | µA | at -VCB = 50 V | 1 | ||
| Emitter cutoff current | -IEBO | 0.1 | µA | at -VEB = 5 V | 1 | ||
| Collector emitter saturation voltage | -VCE(sat) | 0.3 | V | at -IC = 100 mA, -IB = 10 mA | 1 | ||
| Base emitter saturation voltage | -VBE(sat) | 1.1 | V | at -IC = 100 mA, -IB = 10 mA | 1 | ||
| Gain bandwidth product | fT | 80 | MHz | at -VCE = 10 V, -IC = 1 mA | 1 | ||
| Output capacitance | COB | 7 | pF | at -VCB = 10 V, f = 1 MHz | 1 | ||
| Collector base voltage | -VCBO | 50 | V | Ta = 25 °C | 1 | ||
| Collector emitter voltage | -VCEO | 50 | V | Ta = 25 °C | 1 | ||
| Emitter base voltage | -VEBO | 5 | V | Ta = 25 °C | 1 | ||
| Collector current | -IC | 150 | mA | Ta = 25 °C | 1 | ||
| Base current | -IB | 50 | mA | Ta = 25 °C | 1 | ||
| Power dissipation | Ptot | 400 | mW | Ta = 25 °C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SA1015G - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
2sa1015g-etched.step/2sa1015g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1015g.step/2sa1015g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST(Semtech) datasheet (2 pp, sha256
e42b849ec6b48f76, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).