component
2SA1013U
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sa1013u-etched.glb | 6d ago |
| 2sa1013u-etched.step | 6d ago |
| 2sa1013u-hero.glb | 6d ago |
| 2sa1013u-hero.overlay.json | 6d ago |
| 2sa1013u.glb | 6d ago |
| 2sa1013u.kicad_mod | 6d ago |
| 2sa1013u.kicad_sym | 6d ago |
| 2sa1013u.lbr | 6d ago |
| 2sa1013u.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SA1013U
CBI · Bipolar (BJT) · SOT-89
2SA1013U from CBI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; emitter-base voltage limited to -6 V (VEBO) and IEBO max -1 µA at VEB=-6 V. |
| 2 | Collector | passive | Collector of the PNP transistor (also the tab); VCBO and VCEO are -160 V, continuous collector current -1 A. |
| 3 | Emitter | passive | Emitter of the PNP transistor; total device power dissipation 0.5 W, junction temperature 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -160 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -160 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -6 | V | 1 | |||
| Collector Current -Continuous | IC | -1 | A | 1 | |||
| Collector Power Dissipation | PC | 0.5 | W | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | -160 | V | IC=- 100μA , IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -160 | V | IC= -1mA , IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE= -10μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -1 | μA | VCB=-150 V , IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -1 | μA | VEB=-6V, IC=0 | 1 | ||
| DC current gain | hFE | 60 | 320 | VCE=-5 V, IC=- 200mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -1.5 | V | IC= -500m A, IB= -50mA | 1 | ||
| Base-emitter voltage | VBE | -0.75 | V | IC= -5 mA, VCE=- 5V | 1 | ||
| Transition frequency | fT | 15 | MHz | VCE= -5 V, IC= -200mA | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SA1013U - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sa1013u-etched.step/2sa1013u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1013u.step/2sa1013u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (2 pp, sha256
5dcd0cd1270b15fc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).