component
2SA1013SQ-Y
Public Made by Adomby adom
PJSEMI Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA1013SQ-Y
PJSEMI · Bipolar Transistors - BJT · SOT-89
2SA1013SQ-Y from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor, with emitter-base breakdown V(BR)EBO of at least -6 V and VEBO rated at 6 V. |
| 2 | Collector | passive | Collector terminal, rated for -VCBO 160 V, -VCEO 160 V and continuous collector current -IC 1 A, with maximum power dissipation PD 0.5 W for the device. |
| 3 | Emitter | passive | Emitter terminal, rated for -VEBO 6 V, with emitter-base cutoff current -IEBO of 1 μA maximum at VEB = -6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (Group Y) | HFE | 160 | 320 | VCE = -5 V, IC = -200 mA | 2 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 160 | V | IC = -100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 160 | V | IC = -1 mA | 2 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 6 | V | IE = -10 μA | 2 | ||
| Transition Frequency | FT | 15 | MHz | VCE = -5 V, IC = -200 mA | 2 | ||
| Collector Base Cutoff Current | -ICBO | 1 | μA | VCB = -150 V | 2 | ||
| Emitter Base Cutoff Current | -IEBO | 1 | μA | VEB = -6 V | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 1.5 | V | IC = -500 mA, IB = -50 mA | 2 | ||
| Base Emitter On Voltage | VBE(on) | 0.75 | V | VCE = -5 V, IC = -5 mA | 2 | ||
| Collector Base Voltage | -VCBO | 160 | V | 1 | |||
| Collector Emitter Voltage | -VCEO | 160 | V | 1 | |||
| Emitter Base Voltage | -VEBO | 6 | V | 1 | |||
| Collector Current | -IC | 1 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.5 | W | Ratings at 25℃ ambient temperature | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SA1013SQ-Y - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sa1013sq-y-etched.step/2sa1013sq-y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1013sq-y.step/2sa1013sq-y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (6 pp, sha256
d6491017de63e36c, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).