component

2SA1012

Public Made by Adom

by adom

Changjing Bipolar (BJT), TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sa1012factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2SA1012

Changjing · Bipolar (BJT) · TO-220-3L

2SA1012 from Changjing, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the emitter-base voltage is limited to -5 V (VEBO), and the base-emitter saturation voltage is specified at IC=-3A, IB=-150mA.
2 COLLECTOR passive Collector terminal of the PNP transistor, rated for -60 V collector-base (VCBO), -50 V collector-emitter (VCEO), and -5 A continuous collector current (IC), with 2 W collector power dissipation (PC).
3 EMITTER passive Emitter terminal of the PNP transistor, with the emitter-base voltage limited to -5 V (VEBO).

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -60 V IC=-0.1mA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100μA, IC=0 2
Collector cut-off current ICBO -1 μA VCB=-50V, IE=0 2
Emitter cut-off current IEBO -1 μA VEB=-5V, IC=0 2
DC current gain hFE(1) (rank O 70-140, Y 120-240) hFE(1) 70 240 VCE=-1V, IC=-1A 2
DC current gain hFE(2) 30 VCE=-1V, IC=-3A; pulse test tp≤300μs, δ≤0.02 2
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-3A, IB=-150mA; pulse test tp≤300μs, δ≤0.02 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC=-3A, IB=-150mA; pulse test tp≤300μs, δ≤0.02 2
Transition frequency fT 60 MHz VCE=-4V, IC=-1A 2
Collector output capacitance Cob 170 pF VCB=-10V, IE=0, f=1MHz 2
Turn-on time ton 0.1 μs VCC=-30V, IC=-3A, IB1=-IB2=-0.15A 2
Storage time ts 1 μs VCC=-30V, IC=-3A, IB1=-IB2=-0.15A 2
Fall time tf 0.1 μs VCC=-30V, IC=-3A, IB1=-IB2=-0.15A 2
Collector-base voltage VCBO -60 V Ta=25℃ 1
Collector-emitter voltage VCEO -50 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current (continuous) IC -5 A Ta=25℃ 1
Collector power dissipation PC 2 W Ta=25℃ 1
Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance junction to ambient RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: 2SA1012
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: 2sa1012-etched.step / 2sa1012-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1012.step / 2sa1012.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 8061a219830d7054, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF