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2PD1820AS

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2PD1820AS

Nexperia · Bipolar (BJT) · SOT-323

2PD1820AS from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet gives a peak base current limit of IBM 200 mA (max) and emitter-base voltage VEBO 5 V (max).
2 E passive Emitter of the NPN transistor; the datasheet gives an emitter-base voltage limit of VEBO 5 V (max) and a collector current limit of IC 500 mA (max).
3 C passive Collector of the NPN transistor; the datasheet gives a collector-emitter voltage limit of VCEO 50 V (max), collector current IC 500 mA (max) and peak collector current ICM 1 A (max).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 60 V open emitter 2
collector-emitter voltage VCEO 50 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 500 mA 2
peak collector current ICM 1 A 2
peak base current IBM 200 mA 2
total power dissipation Ptot 200 mW Tamb ≤ 25 °C 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air 2
collector-base cut-off current ICBO 10 nA VCB = 20 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO 5 µA VCB = 20 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO 10 nA VEB = 4 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 170 340 VCE = 10 V; IC = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
DC current gain hFE 40 VCE = 10 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 600 mV IC = 300 mA; IB = 30 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector capacitance Cc 15 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3
transition frequency fT 150 MHz VCE = 10 V; IC = 50 mA; f = 100 MHz; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: 2PD1820AS
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: 2pd1820as-etched.step / 2pd1820as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2pd1820as.step / 2pd1820as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 d728a1d0e5792fe8, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF