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2PB710ARL

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2PB710ARL

Nexperia · Bipolar Transistors - BJT · SOT-23

2PB710ARL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; collector-base voltage is limited to -60 V (open emitter) and emitter-base voltage to -5 V, with peak base current up to -200 mA (single pulse, tp ≤ 1 ms).
2 E passive Emitter of the PNP transistor; emitter-base voltage is limited to -5 V (open collector).
3 C passive Collector of the PNP transistor; collector-emitter voltage is limited to -50 V (open base) and collector current to -500 mA (peak -1 A).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base cut-off current ICBO -10 nA VCB = -60 V; IE = 0 A; Tamb = 25 °C 3
Collector-base cut-off current ICBO -5 µA VCB = -60 V; IE = 0 A; Tamb = 150 °C 3
Emitter-base cut-off current IEBO -10 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 40 VCE = -10 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
DC current gain hFE 120 240 VCE = -10 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat -600 mV 3
Base-emitter saturation voltage VBEsat -1.5 V IC = -300 mA; IB = -30 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Collector capacitance Cc 15 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3
Transition frequency fT 120 MHz VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C 3
Collector-base voltage VCBO -60 V open emitter 2
Collector-emitter voltage VCEO -50 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Collector current IC -500 mA 2
Peak collector current ICM -1 A 2
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -55 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint 2

CAD (KiCad official)

  • Symbol: 2PB710ARL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2pb710arl-etched.step / 2pb710arl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2pb710arl.step / 2pb710arl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 7d3618a27fa6d354, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF