component

2PB709ART

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2PB709ART

Nexperia · Bipolar (BJT) · SOT-23

2PB709ART from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base input Base of the 2PB709ART PNP transistor; the datasheet limits for the device include IBM of −100 mA peak base current (tp ≤ 1 ms) and VEBO of −6 V.
2 emitter passive Emitter of the 2PB709ART PNP transistor; the emitter-base voltage limit is VEBO −6 V (open collector), and IEBO is −10 nA max at VEB = −5 V.
3 collector passive Collector of the 2PB709ART PNP transistor; the datasheet limits are VCBO −45 V, VCEO −45 V, IC −100 mA, and ICM −200 mA peak (tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage (open emitter) VCBO -45 V open emitter 2
collector-emitter voltage (open base) VCEO -45 V open base 2
emitter-base voltage (open collector) VEBO -6 V open collector 2
collector current IC -100 mA 2
peak collector current ICM -200 mA single pulse; tp ≤ 1 ms 2
peak base current IBM -100 mA single pulse; tp ≤ 1 ms 2
total power dissipation Ptot 250 mW Tamb ≤ 25 °C 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air 3
thermal resistance from junction to solder point Rth(j-sp) 140 K/W 3
collector-base cut-off current ICBO -10 nA VCB = −45 V; IE = 0 A 4
collector-base cut-off current (high temperature) ICBO -5 µA VCB = −45 V; IE = 0 A; Tj = 150 °C 4
emitter-base cut-off current IEBO -10 nA VEB = −5 V; IC = 0 A 4
DC current gain hFE 210 340 VCE = −10 V; IC = −2 mA 4
collector-emitter saturation voltage VCEsat -500 mV IC = −100 mA; IB = −10 mA 4
transition frequency fT 70 MHz VCE = −10 V; IC = −1 mA; f = 100 MHz 4
collector capacitance Cc 5 pF VCB = −10 V; IE = ie = 0 A; f = 1 MHz 4

CAD (KiCad official)

  • Symbol: 2PB709ART
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2pb709art-etched.step / 2pb709art-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2pb709art.step / 2pb709art.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 985a5062dfb0e016, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF