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Contents

README

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2P15S

HL · MOSFETs · SOP-8

2P15S from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; continuous source current IS is rated -1.6 A (VG=VD=0V, force current) per the electrical characteristics.
2 S passive Source terminal of the P-channel MOSFET; continuous source current IS is rated -1.6 A (VG=VD=0V, force current) per the electrical characteristics.
3 S passive Source terminal of the P-channel MOSFET; continuous source current IS is rated -1.6 A (VG=VD=0V, force current) per the electrical characteristics.
4 G input Gate terminal; gate-source voltage is rated ±20 V (VGS) per the absolute maximum ratings.
5 D passive Drain terminal; drain-source voltage is rated -150 V (VDS) and continuous drain current is -1.6 A at TA=25℃ with VGS=-10V per the absolute maximum ratings.
6 D passive Drain terminal; drain-source voltage is rated -150 V (VDS) and continuous drain current is -1.6 A at TA=25℃ with VGS=-10V per the absolute maximum ratings.
7 D passive Drain terminal; drain-source voltage is rated -150 V (VDS) and continuous drain current is -1.6 A at TA=25℃ with VGS=-10V per the absolute maximum ratings.
8 D passive Drain terminal; drain-source voltage is rated -150 V (VDS) and continuous drain current is -1.6 A at TA=25℃ with VGS=-10V per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer HL
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -150 V TA=25℃ (table header) 1
Gate-Source Voltage VGS -20 20 V TA=25℃ (table header) 1
Continuous Drain Current ID -1.6 A VGS=-10V, TA=25℃ 1
Continuous Drain Current ID -0.88 A VGS=-10V, TA=70℃ 1
Pulsed Drain Current IDM -4.4 A Pulsed drain current (note 2: pulse width ≦300us, duty cycle ≦2%) 1
Single Pulse Avalanche Energy EAS 12.5 mJ VDD=-50V,VGS=-10V,L=1mH,IAS=-5A (note 3) 1
Avalanche Current IAS 5 A TA=25℃ (table header) 1
Total Power Dissipation PD 2 W TA = 25℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Junction-ambient, note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 40 ℃/W Junction-case, note 1 1
Drain-Source Breakdown Voltage BVDSS -150 V VGS=0V,ID=-250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS -1 uA VDS=-120V,VGS=0V,TJ=25℃ 2
Drain-Source Leakage Current (TJ=85℃) IDSS -30 uA VDS=-120V,VGS=0V,TJ=85℃ 2
Gate-Source Leakage IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate-Threshold Voltage VGS(th) -2 -3 -4 V VGS=VDS,ID=-250µA 2
Drain-Source on-State Resistance RDS(on) 650 780 mΩ VGS=-10V,ID=-1A 2
Drain-Source on-State Resistance RDS(on) 700 980 mΩ VGS=-6V,ID=-0.5A 2
Continuous Source Current IS -1.6 A VG=VD=0V, Force Current (notes 1,5) 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-1A,TJ=25℃ 2

CAD (KiCad official)

  • Symbol: 2P15S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 2p15s-etched.step / 2p15s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2p15s.step / 2p15s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (6 pp, sha256 bbfc533e58d9e2b8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF