component
2NM65G-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
2NM65G-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
2NM65G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 2NM65 N-channel super-junction MOSFET, per the datasheet pin assignment (G: Gate); the datasheet gives no separate gate voltage limit for this pin, and the gate-source voltage rating is VGSS ±30 V. |
| 2 | D | passive | Drain terminal of the MOSFET, per the datasheet pin assignment (D: Drain); the drain-source voltage rating is VDSS 650 V. |
| 3 | S | passive | Source terminal of the MOSFET, per the datasheet pin assignment (S: Source); the continuous drain current rating is 2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Drain Current Continuous | ID | 2 | A | 3 | |||
| Drain Current Pulsed | IDM | 4 | A | Repetitive, pulse width limited by max junction temperature (Note 2) | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 38 | mJ | L=30mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ = 25°C (Note 3) | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 2.7 | V/ns | ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C (Note 4) | 3 | ||
| Power Dissipation (TO-251/TO-252) | PD | 44 | W | TO-251/TO-252 package | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 650V, VGS = 0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.52 | Ω | VGS = 10V, ID = 1.0A | 4 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=2.0A, VGS=0V | 4 | ||
| Continuous Drain-Source Current | IS | 2 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 4 | A | 4 | |||
| Input Capacitance | CISS | 156 | pF | VGS =0V, VDS =50V, f =1MHz | 4 | ||
| Output Capacitance | COSS | 35 | pF | VGS =0V, VDS =50V, f =1MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 2.1 | pF | VGS =0V, VDS =50V, f =1MHz | 4 | ||
| Total Gate Charge | QG | 13 | nC | VDS=520V, VGS=10V, ID=2.0A (Note 1, 2) | 4 | ||
| Gate-Source Charge | QGS | 6 | nC | VDS=520V, VGS=10V, ID=2.0A (Note 1, 2) | 4 | ||
| Gate-Drain Charge | QGD | 3 | nC | VDS=520V, VGS=10V, ID=2.0A (Note 1, 2) | 4 | ||
| Turn-On Delay Time | tD(ON) | 4 | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-On Rise Time | tR | 17 | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-Off Delay Time | tD(OFF) | 21 | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-Off Fall Time | tF | 26 | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 | ||
| Body Diode Reverse Recovery Time | trr | 196 | ns | IS=2.0A, VGS=0V, dI/dt=100A/µs | 4 | ||
| Body Diode Reverse Recovery Charge | Qrr | 1 | μC | 4 | |||
| Junction to Ambient (TO-251/TO-252) | θJA | 100 | °C/W | Junction to ambient, TO-251/TO-252 package | 3 | ||
| Junction to Case (TO-251/TO-252) | θJC | 2.8 | °C/W | Junction to case, TO-251/TO-252; device mounted on FR-4 PCB, 2oz copper, 1 inch square copper plate (Note) | 3 |
CAD (KiCad official)
- Symbol:
2NM65G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2nm65g-tn3-r-etched.step/2nm65g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2nm65g-tn3-r.step/2nm65g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
2b9f797afb0dc6ec, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2NM65G-TN3-R
**UTC Unisonic Tech** · MOSFETs · TO-252
2NM65G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 2NM65 N-channel super-junction MOSFET, per the datasheet pin assignment (G: Gate); the datasheet gives no separate gate voltage limit for this pin, and the gate-source voltage rating is VGSS ±30 V. |
| 2 | D | passive | Drain terminal of the MOSFET, per the datasheet pin assignment (D: Drain); the drain-source voltage rating is VDSS 650 V. |
| 3 | S | passive | Source terminal of the MOSFET, per the datasheet pin assignment (S: Source); the continuous drain current rating is 2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 3 |
| Drain Current Continuous | ID | | | 2 | A | | 3 |
| Drain Current Pulsed | IDM | | | 4 | A | Repetitive, pulse width limited by max junction temperature (Note 2) | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 38 | mJ | L=30mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ = 25°C (Note 3) | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 2.7 | V/ns | ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C (Note 4) | 3 |
| Power Dissipation (TO-251/TO-252) | PD | | | 44 | W | TO-251/TO-252 package | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0V, ID = 250μA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = 650V, VGS = 0V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 30V, VDS = 0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS = -30V, VDS = 0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2.5 | | 4.5 | V | VDS = VGS, ID = 250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | | 2.52 | Ω | VGS = 10V, ID = 1.0A | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | IS=2.0A, VGS=0V | 4 |
| Continuous Drain-Source Current | IS | | | 2 | A | | 4 |
| Maximum Body-Diode Pulsed Current | ISM | | | 4 | A | | 4 |
| Input Capacitance | CISS | | 156 | | pF | VGS =0V, VDS =50V, f =1MHz | 4 |
| Output Capacitance | COSS | | 35 | | pF | VGS =0V, VDS =50V, f =1MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 2.1 | | pF | VGS =0V, VDS =50V, f =1MHz | 4 |
| Total Gate Charge | QG | | 13 | | nC | VDS=520V, VGS=10V, ID=2.0A (Note 1, 2) | 4 |
| Gate-Source Charge | QGS | | 6 | | nC | VDS=520V, VGS=10V, ID=2.0A (Note 1, 2) | 4 |
| Gate-Drain Charge | QGD | | 3 | | nC | VDS=520V, VGS=10V, ID=2.0A (Note 1, 2) | 4 |
| Turn-On Delay Time | tD(ON) | | 4 | | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 |
| Turn-On Rise Time | tR | | 17 | | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 |
| Turn-Off Delay Time | tD(OFF) | | 21 | | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 |
| Turn-Off Fall Time | tF | | 26 | | ns | VDD=100V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 |
| Body Diode Reverse Recovery Time | trr | | 196 | | ns | IS=2.0A, VGS=0V, dI/dt=100A/µs | 4 |
| Body Diode Reverse Recovery Charge | Qrr | | 1 | | μC | | 4 |
| Junction to Ambient (TO-251/TO-252) | θJA | | 100 | | °C/W | Junction to ambient, TO-251/TO-252 package | 3 |
| Junction to Case (TO-251/TO-252) | θJC | | 2.8 | | °C/W | Junction to case, TO-251/TO-252; device mounted on FR-4 PCB, 2oz copper, 1 inch square copper plate (Note) | 3 |
## CAD (KiCad official)
- Symbol: `2NM65G-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2nm65g-tn3-r-etched.step` / `2nm65g-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2nm65g-tn3-r.step` / `2nm65g-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603137525762707456) (9 pp, sha256 `2b9f797afb0dc6ec`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2nm65g-tn3-r-datasheet.pdf)