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2N7008-G

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Microchip Tech MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7008-G

Microchip Tech · MOSFETs · TO-92-3

2N7008-G from Microchip Tech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel enhancement-mode vertical DMOS FET, with an integral source-drain diode (VSD max 1.5V at ISD = 150 mA).
2 Gate input Gate terminal with high input impedance; gate-to-source voltage limited to ±30V and threshold VGS(th) 1V to 2.5V at ID = 250 µA.
3 Drain passive Drain terminal; drain-to-source breakdown voltage BVDSS min 60V, continuous drain current 230 mA in the 3-lead TO-92.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TO-92-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = -10 µA 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS = VDS, ID = 250 µA 2
Gate Body Leakage Current IGSS 100 nA VGS = ±30V, VDS = 0V 2
Zero-Gate Voltage Drain Current IDSS 1 µA VGS = 0V, VDS = 50V 2
Zero-Gate Voltage Drain Current IDSS 500 µA VGS = 0V, VDS = 50V, TA = 125°C (Note 1) 2
On-State Drain Current ID(ON) 500 mA VGS = 10V, VDS ≥ 2VDS(ON) 2
Static Drain-to-Source On-State Resistance RDS(ON) 7.5 Ω VGS = 5V, ID = 50 mA 2
Forward Transconductance GFS 80 mmho VDS = 10V, ID = 200 mA 2
Input Capacitance CISS 50 pF VGS = 0V, VDS = 25V, f = 1 MHz 2
Common-Source Output Capacitance COSS 25 pF VGS = 0V, VDS = 25V, f = 1 MHz 2
Reverse Transfer Capacitance CRSS 5 pF VGS = 0V, VDS = 25V, f = 1 MHz 2
Turn-On Delay Time t(ON) 20 ns VDD = 30V, ID = 200 mA, RGEN = 25Ω 2
Turn-Off Delay Time t(OFF) 20 ns VDD = 30V, ID = 200 mA, RGEN = 25Ω 2
Diode Forward Voltage Drop VSD 1.5 V VGS = 0V, ISD = 150 mA (Note 1) 2
Gate-to-Source Voltage -30 30 V 2
Operating Ambient Temperature TA -55 150 °C 2
Storage Temperature TS -55 150 °C 2
Operating Ambient Temperature TA -55 150 °C 3
Storage Temperature TS -55 150 °C 3
Package Thermal Resistance, Junction to Ambient θJA 132 °C/W 3-lead TO-92 3
Continuous Drain Current ID 230 mA 3-lead TO-92, continuous, limited by maximum TJ 3
Pulsed Drain Current ID 1.3 A 3-lead TO-92, pulsed 3
Power Dissipation 1 W TA = 25°C, 3-lead TO-92 3
Continuous Reverse Drain Current IDR 230 mA 3-lead TO-92, limited by maximum TJ 3
Pulsed Reverse Drain Current IDRM 1.3 A 3-lead TO-92 3

CAD (KiCad official)

  • Symbol: 2N7008-G
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 2n7008-g-etched.step / 2n7008-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7008-g.step / 2n7008-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (12 pp, sha256 96bae8469d8d951a, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF