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2N7002ZG-AE2-R

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UTC(Unisonic Tech) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002ZG-AE2-R

UTC(Unisonic Tech) · MOSFETs · SOT-23

2N7002ZG-AE2-R from UTC(Unisonic Tech), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the 2N7002Z N-channel enhancement-mode MOSFET, rated for a gate-source voltage VGSS of ±20 V.
2 S passive Source of the N-channel MOSFET, the reference terminal for the gate-source voltage (VGSS ±20 V).
3 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage of 60 V and a continuous drain current of 300 mA.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 3
Gate-Source Voltage VGSS -20 20 V 3
Drain Current Continuous ID 300 mA 3
Drain Current Pulse ID 800 mA Note 2: pulse width≦10μs, duty cycle≦1% 3
Power Dissipation PD 225 mW SOT-23-3 package 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=10µA 3
Drain-Source Leakage Current IDSS 1 µA VDS=60V, VGS=0V 3
Gate-Source Leakage Current IGSS -10 10 µA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 2.5 V VDS=VGS, ID=250µA 3
Static Drain-Source On-Resistance RDS(ON) 4 Ω VGS=10V, ID=300mA 3
Static Drain-Source On-Resistance RDS(ON) 6 Ω VGS=4.5V, ID=50mA 3
Input Capacitance CISS 22 50 pF VDS=25V, VGS=0V, f=1.0MHz 3
Output Capacitance COSS 9 25 pF VDS=25V, VGS=0V, f=1.0MHz 3
Reverse Transfer Capacitance CRSS 4 5 pF VDS=25V, VGS=0V, f=1.0MHz 3
Turn-ON Delay Time tD(ON) 1.3 20 ns ID=0.2 A, VDD=30V, VGS=10V, RL=150Ω, RG=10Ω 3
Turn-OFF Delay Time tD(OFF) 4.2 30 ns ID=0.2 A, VDD=30V, VGS=10V, RL=150Ω, RG=10Ω 3
Maximum Continuous Drain-Source Diode Forward Current IS 300 mA 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 0.8 A 3
Drain-Source Diode Forward Voltage VSD 0.88 1.5 V VGS=0V, IS=300mA (Note: pulse width≦300μs, duty cycle≦1%) 3

CAD (KiCad official)

  • Symbol: 2N7002ZG-AE2-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002zg-ae2-r-etched.step / 2n7002zg-ae2-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002zg-ae2-r.step / 2n7002zg-ae2-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256 79f70f3fc0fd3588, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF