component
2N7002PV
Public Made by Adomby adom
Nexperia MOSFETs, SOT-666. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "2n7002pv",
"title": "2N7002PV",
"brief": "Nexperia MOSFETs, SOT-666. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"2n7002pv",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "2N7002PV",
"manufacturer": "Nexperia",
"package": "SOT-666",
"pin_count": 6,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://assets.nexperia.com/documents/data-sheet/2N7002PV.pdf",
"parts": {
"symbol": "2n7002pv.kicad_sym",
"footprint": "2n7002pv.kicad_mod",
"model_3d": "2n7002pv-hero.glb",
"model_3d_plain": "2n7002pv-etched.glb",
"model_3d_step": "2n7002pv-etched.step",
"model_3d_step_plain": "2n7002pv.step",
"lbr": "2n7002pv.lbr"
},
"distributor_links": {
"lcsc": "C551422"
},
"distributor_check": {
"checked_at": "2026-10-16T22:07:53Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "S1",
"type": "passive",
"description": "Source terminal of transistor 1 of the dual N-channel MOSFET; the datasheet gives no pin-specific limits, and the per-transistor ratings are VDS 60 V, VGS -20 V to 20 V and ID 350 mA."
},
{
"number": "2",
"name": "G1",
"type": "input",
"description": "Gate terminal of transistor 1, logic-level compatible, with VGS limited to -20 V to 20 V per transistor."
},
{
"number": "3",
"name": "D2",
"type": "passive",
"description": "Drain terminal of transistor 2 of the dual N-channel MOSFET; the datasheet gives no pin-specific limits, and the per-transistor ratings are VDS 60 V and ID 350 mA."
},
{
"number": "4",
"name": "S2",
"type": "passive",
"description": "Source terminal of transistor 2 of the dual N-channel MOSFET; the datasheet gives no pin-specific limits, and the per-transistor ratings are VDS 60 V, VGS -20 V to 20 V and ID 350 mA."
},
{
"number": "5",
"name": "G2",
"type": "input",
"description": "Gate terminal of transistor 2, logic-level compatible, with VGS limited to -20 V to 20 V per transistor."
},
{
"number": "6",
"name": "D1",
"type": "passive",
"description": "Drain terminal of transistor 1 of the dual N-channel MOSFET; the datasheet gives no pin-specific limits, and the per-transistor ratings are VDS 60 V and ID 350 mA."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Pin numbers, names and functions are from the Table 2 pinning information on page 2 for the SOT666 p"
],
"pages_sent": 14,
"cost_usd": 0.0593,
"at": "2026-10-16T22:07:30"
},
"datasheet": {
"url": "https://assets.nexperia.com/documents/data-sheet/2N7002PV.pdf",
"pages": 14,
"sha256": "50e5d879eac29fb9",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 6,
"described": 6,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "2n7002pv.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
1.6,
1.6,
0.55
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "eeaa97c06a9396d5faa21f9016c75f498a547b5ab955a64686d4a98199667adf",
"checked": "2026-10-16",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "2n7002pv-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
1.6,
1.6,
0.55
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "5fcd0ce906e3edc8bbd8d62e530d6fa9fd189d63ca36e364213f6d669fd20a88",
"checked": "2026-10-16",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Nexperia",
"Package": "SOT-666",
"Category": "Transistors/Thyristors",
"Pins": "6"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "50e5d879eac29fb9270c883af3a77f224c6dac6b8939b360724a2a0fd90e0dcd",
"rows": [
{
"name": "Drain-source voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 60,
"conditions": "Per transistor",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate-source voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "Tamb = 25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "mA",
"min": null,
"typ": null,
"max": 350,
"conditions": "VGS = 10 V; Tamb = 25 °C [1]; [1] device on FR4 PCB, mounting pad for drain 1 cm2",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "mA",
"min": null,
"typ": null,
"max": 250,
"conditions": "VGS = 10 V; Tamb = 100 °C [1]; [1] device on FR4 PCB, mounting pad for drain 1 cm2",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Peak drain current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 1.2,
"conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Total power dissipation",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "mW",
"min": null,
"typ": null,
"max": 330,
"conditions": "Tamb = 25 °C [2]; [2] device on FR4 PCB, standard footprint",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Total power dissipation",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "mW",
"min": null,
"typ": null,
"max": 390,
"conditions": "[1]; [1] device on FR4 PCB, mounting pad for drain 1 cm2",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Total power dissipation",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "mW",
"min": null,
"typ": null,
"max": 1090,
"conditions": "Tsp = 25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Total power dissipation (per device)",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "mW",
"min": null,
"typ": null,
"max": 500,
"conditions": "Tamb = 25 °C [2]; [2] device on FR4 PCB, standard footprint",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Junction temperature",
"symbol": "Tj",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Ambient temperature",
"symbol": "Tamb",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -65,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Source current (source-drain diode)",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "mA",
"min": null,
"typ": null,
"max": 350,
"conditions": "Tamb = 25 °C [1]; [1] device on FR4 PCB, mounting pad for drain 1 cm2",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal resistance junction to ambient (per device)",
"symbol": "Rth(j-a)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": null,
"max": 250,
"conditions": "in free air [1]; [1] device on FR4 PCB, single-sided copper, tin-plated and standard footprint",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Thermal resistance junction to ambient (per transistor)",
"symbol": "Rth(j-a)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": 330,
"max": 380,
"conditions": "in free air [1]; [1] device on FR4 PCB, single-sided copper, tin-plated and standard footprint",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Thermal resistance junction to ambient (per transistor)",
"symbol": "Rth(j-a)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": 280,
"max": 320,
"conditions": "in free air [2]; [2] device on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Thermal resistance junction to solder point",
"symbol": "Rth(j-sp)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": null,
"max": 115,
"conditions": "",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 60,
"typ": null,
"max": null,
"conditions": "ID = 10 µA; VGS = 0 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Gate-source threshold voltage",
"symbol": "VGSth",
"kind": "electrical",
"unit": "V",
"min": 1.1,
"typ": 1.75,
"max": 2.4,
"conditions": "ID = 250 µA; VDS=VGS; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Drain leakage current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS = 60 V; VGS = 0 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Drain leakage current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS = 60 V; VGS = 0 V; Tj = 150 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Gate leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": 100,
"conditions": "VGS = 20 V; VDS = 0 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Gate leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": -100,
"conditions": "VGS = -20 V; VDS = 0 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "RDSon",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 1.3,
"max": 2,
"conditions": "VGS = 5 V; ID = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "RDSon",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 1,
"max": 1.6,
"conditions": "VGS = 10 V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Total gate charge",
"symbol": "QG(tot)",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 0.6,
"max": 0.8,
"conditions": "VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Input capacitance",
"symbol": "Ciss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 30,
"max": 50,
"conditions": "VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Turn-on delay time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 3,
"max": 6,
"conditions": "VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Turn-off delay time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 10,
"max": 20,
"conditions": "VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Source-drain voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": 0.47,
"typ": 0.75,
"max": 1.1,
"conditions": "IS = 115 mA; VGS = 0 V; Tj = 25 °C",
"source_page": 6,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"2n7002pv"
],
"discovery_pitch": "2N7002PV (Nexperia) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"2n7002pv.kicad_sym",
"2n7002pv.kicad_mod",
"2n7002pv.glb",
"2n7002pv.step",
"2n7002pv.lbr",
"docs/hero.png",
"docs/2n7002pv-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"2n7002pv-hero.glb",
"2n7002pv-hero.overlay.json",
"2n7002pv-etched.glb"
],
"visibility": {
"public": true
}
}