component
2N7002L
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
2N7002L
onsemi · MOSFETs · SOT-23
2N7002L from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; gate-source voltage is rated ±20 Vdc continuous and ±40 Vpk non-repetitive (VGS, VGSM). |
| 2 | SOURCE | passive | Source terminal; continuous drain current is limited to ±115 mA at TC = 25°C, and the body diode is rated for −115 mA continuous source current. |
| 3 | DRAIN | passive | Drain terminal; drain-source voltage is rated 60 Vdc (VDSS) with continuous drain current of ±115 mA at TC = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | Vdc | 1 | |||
| Drain-Gate Voltage | VDGR | 60 | Vdc | RGS = 1.0 M | 1 | ||
| Drain Current - Continuous | ID | -115 | 115 | mAdc | TC = 25°C (Note 1) | 1 | |
| Drain Current - Continuous | ID | -75 | 75 | mAdc | TC = 100°C (Note 1) | 1 | |
| Drain Current - Pulsed | IDM | -800 | 800 | mAdc | Note 2: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0% | 1 | |
| Gate-Source Voltage - Continuous | VGS | -20 | 20 | Vdc | 1 | ||
| Gate-Source Voltage - Non-repetitive | VGSM | -40 | 40 | Vpk | tp ≤ 50 s | 1 | |
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | Note 3: TA = 25°C | 1 | ||
| Derate above 25°C, FR-5 Board | PD | 1.8 | mW/°C | Note 3 | 1 | ||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | 556 | °C/W | Note 3 | 1 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | Note 4: TA = 25°C | 1 | ||
| Derate above 25°C, Alumina Substrate | PD | 2.4 | mW/°C | Note 4 | 1 | ||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | 417 | °C/W | Note 4 | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | Vdc | VGS = 0, ID = 10 Adc | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | Adc | TJ = 25°C (VGS = 0, VDS = 60 Vdc) | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | Adc | TJ = 125°C (VGS = 0, VDS = 60 Vdc) | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nAdc | VGS = 20 Vdc | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nAdc | VGS = −20 Vdc | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | Vdc | VDS = VGS, ID = 250 Adc | 2 | |
| On-State Drain Current | ID(on) | 500 | mA | VDS ≥ 2.0 VDS(on), VGS = 10 Vdc | 2 | ||
| Static Drain-Source On-State Voltage | VDS(on) | 3.75 | Vdc | VGS = 10 Vdc, ID = 500 mAdc | 2 | ||
| Static Drain-Source On-State Voltage | VDS(on) | 0.375 | Vdc | VGS = 5.0 Vdc, ID = 50 mAdc | 2 | ||
| Static Drain-Source On-State Resistance | rDS(on) | 7.5 | Ohms | VGS = 10 V, ID = 500 mAdc, TC = 25°C | 2 | ||
| Static Drain-Source On-State Resistance | rDS(on) | 13.5 | Ohms | VGS = 10 V, ID = 500 mAdc, TC = 125°C | 2 | ||
| Forward Transconductance | gFS | 80 | mS | VDS ≥ 2.0 VDS(on), ID = 200 mAdc | 2 | ||
| Input Capacitance | Ciss | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 20 | ns | VDD = 25 Vdc, ID ≈ 500 mAdc, RG = 25, RL = 50, Vgen = 10 V | 2 | ||
| Turn-Off Delay Time | td(off) | 40 | ns | 2 | |||
| Diode Forward On-Voltage | VSD | -1.5 | Vdc | IS = 115 mAdc, VGS = 0 V | 2 | ||
| Source Current Continuous (Body Diode) | IS | -115 | mAdc | 2 | |||
| Source Current Pulsed (Body Diode) | ISM | -800 | mAdc | 2 |
CAD (KiCad official)
- Symbol:
2N7002L - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n7002l-etched.step/2n7002l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002l.step/2n7002l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
2163289baa45a9ed, retrieved 2026-10-18, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2N7002L
**onsemi** · MOSFETs · SOT-23
2N7002L from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; gate-source voltage is rated ±20 Vdc continuous and ±40 Vpk non-repetitive (VGS, VGSM). |
| 2 | SOURCE | passive | Source terminal; continuous drain current is limited to ±115 mA at TC = 25°C, and the body diode is rated for −115 mA continuous source current. |
| 3 | DRAIN | passive | Drain terminal; drain-source voltage is rated 60 Vdc (VDSS) with continuous drain current of ±115 mA at TC = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | Vdc | | 1 |
| Drain-Gate Voltage | VDGR | | | 60 | Vdc | RGS = 1.0 M | 1 |
| Drain Current - Continuous | ID | -115 | | 115 | mAdc | TC = 25°C (Note 1) | 1 |
| Drain Current - Continuous | ID | -75 | | 75 | mAdc | TC = 100°C (Note 1) | 1 |
| Drain Current - Pulsed | IDM | -800 | | 800 | mAdc | Note 2: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0% | 1 |
| Gate-Source Voltage - Continuous | VGS | -20 | | 20 | Vdc | | 1 |
| Gate-Source Voltage - Non-repetitive | VGSM | -40 | | 40 | Vpk | tp ≤ 50 s | 1 |
| Total Device Dissipation, FR-5 Board | PD | | | 225 | mW | Note 3: TA = 25°C | 1 |
| Derate above 25°C, FR-5 Board | PD | | | 1.8 | mW/°C | Note 3 | 1 |
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | | | 556 | °C/W | Note 3 | 1 |
| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | Note 4: TA = 25°C | 1 |
| Derate above 25°C, Alumina Substrate | PD | | | 2.4 | mW/°C | Note 4 | 1 |
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | | | 417 | °C/W | Note 4 | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | Vdc | VGS = 0, ID = 10 Adc | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | Adc | TJ = 25°C (VGS = 0, VDS = 60 Vdc) | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | Adc | TJ = 125°C (VGS = 0, VDS = 60 Vdc) | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nAdc | VGS = 20 Vdc | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | | | -100 | nAdc | VGS = −20 Vdc | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | Vdc | VDS = VGS, ID = 250 Adc | 2 |
| On-State Drain Current | ID(on) | 500 | | | mA | VDS ≥ 2.0 VDS(on), VGS = 10 Vdc | 2 |
| Static Drain-Source On-State Voltage | VDS(on) | | | 3.75 | Vdc | VGS = 10 Vdc, ID = 500 mAdc | 2 |
| Static Drain-Source On-State Voltage | VDS(on) | | | 0.375 | Vdc | VGS = 5.0 Vdc, ID = 50 mAdc | 2 |
| Static Drain-Source On-State Resistance | rDS(on) | | | 7.5 | Ohms | VGS = 10 V, ID = 500 mAdc, TC = 25°C | 2 |
| Static Drain-Source On-State Resistance | rDS(on) | | | 13.5 | Ohms | VGS = 10 V, ID = 500 mAdc, TC = 125°C | 2 |
| Forward Transconductance | gFS | 80 | | | mS | VDS ≥ 2.0 VDS(on), ID = 200 mAdc | 2 |
| Input Capacitance | Ciss | | | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Turn-On Delay Time | td(on) | | | 20 | ns | VDD = 25 Vdc, ID ≈ 500 mAdc, RG = 25, RL = 50, Vgen = 10 V | 2 |
| Turn-Off Delay Time | td(off) | | | 40 | ns | | 2 |
| Diode Forward On-Voltage | VSD | | | -1.5 | Vdc | IS = 115 mAdc, VGS = 0 V | 2 |
| Source Current Continuous (Body Diode) | IS | | | -115 | mAdc | | 2 |
| Source Current Pulsed (Body Diode) | ISM | | | -800 | mAdc | | 2 |
## CAD (KiCad official)
- Symbol: `2N7002L`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2n7002l-etched.step` / `2n7002l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n7002l.step` / `2n7002l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/2n7002l-d.pdf) (6 pp, sha256 `2163289baa45a9ed`, retrieved 2026-10-18, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2n7002l-datasheet.pdf)