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2N7002KT1G-ES

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ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002KT1G-ES

ElecSuper · MOSFETs · SOT-23

2N7002KT1G-ES from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET; the datasheet rates gate-source voltage VGS at ±20 V and gate threshold VGS(TH) at 1.0 to 2.0 V.
2 Source passive Source terminal of the N-channel MOSFET; the datasheet gives no source-specific limit, and the device is rated for drain-source voltage BVDSS of 60 V.
3 Drain passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage BVDSS is 60 V and continuous drain current is 0.3 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 0.3 A TA=25℃ 2
Continuous Drain Current ID 0.2 A TA=100℃ 2
Maximum Power Dissipation PD 350 mW 2
Pulsed Drain Current IDM 1.2 A 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 3
Gate-to-source Leakage Current IGSS -10 10 uA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.6 2 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 1.85 2.2 Ω VGS=10V, ID=0.3A 3
Drain-to-source On-resistance RDS(on) 2.05 3 Ω VGS=4.5V, ID=0.2A 3
Input Capacitance CISS 28 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 11 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 4 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 1.8 nC VGS=4.5V, VDS=10V, ID=0.3A 3
Gate-to-Source Charge QGS 0.3 nC VGS=4.5V, VDS=10V, ID=0.3A 3
Gate-to-Drain Charge QGD 0.6 nC VGS=4.5V, VDS=10V, ID=0.3A 3
Turn-On Delay Time td(ON) 2 ns VGS=10V, VDS=10V, ID=0.2A, RG=10Ω 3
Rise Time tr 15 ns VGS=10V, VDS=10V, ID=0.2A, RG=10Ω 3
Turn-Off Delay Time td(OFF) 7 ns VGS=10V, VDS=10V, ID=0.2A, RG=10Ω 3
Fall Time tf 20 ns VGS=10V, VDS=10V, ID=0.2A, RG=10Ω 3
Forward Voltage VSD 1.5 V VGS=0V, IS=0.3A 3
Junction-to-Ambient Thermal Resistance RθJA 357 °C/W Single Operation 2

CAD (KiCad official)

  • Symbol: 2N7002KT1G-ES
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002kt1g-es-etched.step / 2n7002kt1g-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002kt1g-es.step / 2n7002kt1g-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (8 pp, sha256 1ae0f3941ede70d8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF