component
2N7002KLW
Public Made by Adomby adom
Changjing MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2N7002KLW
Changjing · MOSFETs · SOT-323
2N7002KLW from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the voltage-controlled small-signal switch, rated for VGS of ±20 V, with gate-source Zener protection (BVGSO ±21.5 V min, ±30 V max). |
| 2 | SOURCE | passive | Source terminal of the MOSFET; the body diode forward voltage VSD is 1.5 V max at IS = 240 mA with VGS = 0 V. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET, rated for VDS of 60 V with a drain current ID of 340 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = VGS, ID = 1mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 48V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS1 | -10 | 10 | µA | VGS = ±20V, VDS = 0V | 2 | |
| Gate-Source leakage current | IGSS2 | -200 | 200 | nA | VGS = ±10V, VDS = 0V | 2 | |
| Gate-Source leakage current | IGSS3 | -100 | 100 | nA | VGS = ±5V, VDS = 0V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 4 | Ω | VGS = 4.5V, ID = 200mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 3.5 | Ω | VGS = 10V, ID = 340mA | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | VGS = 0V, IS = 240mA | 2 | ||
| Recovered charge | Qr | 30 | nC | VGS=0V,IS=240mA,VR=25V, dls/dt=-100A/µS | 2 | ||
| Gate-Source Breakdown Voltage | BVGSO | 21.5 | 30 | V | Igs = ±1mA (Open Drain) | 2 | |
| Input Capacitance | Ciss | 40 | pF | 2 | |||
| Output Capacitance | Coss | 30 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 10 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 15 | ns | VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω | 2 | ||
| Reverse recovery Time | trr | 30 | ns | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS | 2 | ||
| Drain-Source voltage | VDS | 60 | V | 1 | |||
| Drain Current | ID | 340 | mA | 1 | |||
| Power Dissipation | PD | 0.2 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 625 | ℃ /W | 1 |
CAD (KiCad official)
- Symbol:
2N7002KLW - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
2n7002klw-etched.step/2n7002klw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002klw.step/2n7002klw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
0978572024386cd4, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2N7002KLW
**Changjing** · MOSFETs · SOT-323
2N7002KLW from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the voltage-controlled small-signal switch, rated for VGS of ±20 V, with gate-source Zener protection (BVGSO ±21.5 V min, ±30 V max). |
| 2 | SOURCE | passive | Source terminal of the MOSFET; the body diode forward voltage VSD is 1.5 V max at IS = 240 mA with VGS = 0 V. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET, rated for VDS of 60 V with a drain current ID of 340 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = VGS, ID = 1mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 48V, VGS = 0V | 2 |
| Gate-Source leakage current | IGSS1 | -10 | | 10 | µA | VGS = ±20V, VDS = 0V | 2 |
| Gate-Source leakage current | IGSS2 | -200 | | 200 | nA | VGS = ±10V, VDS = 0V | 2 |
| Gate-Source leakage current | IGSS3 | -100 | | 100 | nA | VGS = ±5V, VDS = 0V | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 4 | Ω | VGS = 4.5V, ID = 200mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 3.5 | Ω | VGS = 10V, ID = 340mA | 2 |
| Diode Forward Voltage | VSD | | | 1.5 | V | VGS = 0V, IS = 240mA | 2 |
| Recovered charge | Qr | | | 30 | nC | VGS=0V,IS=240mA,VR=25V, dls/dt=-100A/µS | 2 |
| Gate-Source Breakdown Voltage | BVGSO | 21.5 | | 30 | V | Igs = ±1mA (Open Drain) | 2 |
| Input Capacitance | Ciss | | 40 | | pF | | 2 |
| Output Capacitance | Coss | | 30 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 10 | | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
| Turn-On Delay Time | td(on) | | 10 | | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 15 | | ns | VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω | 2 |
| Reverse recovery Time | trr | | 30 | | ns | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS | 2 |
| Drain-Source voltage | VDS | | | 60 | V | | 1 |
| Drain Current | ID | | | 340 | mA | | 1 |
| Power Dissipation | PD | | | 0.2 | W | | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Gate-Source voltage | VGS | -20 | | 20 | V | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 625 | ℃ /W | | 1 |
## CAD (KiCad official)
- Symbol: `2N7002KLW`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `2n7002klw-etched.step` / `2n7002klw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n7002klw.step` / `2n7002klw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/2n7002klw-datasheet.pdf) (5 pp, sha256 `0978572024386cd4`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2n7002klw-datasheet.pdf)