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2N7002KDWX

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Shenzhen JingYang MOSFETs, SOT363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002KDWX

Shenzhen JingYang · MOSFETs · SOT363

2N7002KDWX from Shenzhen JingYang, in a SOT363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 60V VDS max, 340mA continuous drain current).
2 G1 input Gate of MOSFET 1 with gate-source Zener ESD protection (HBM 2.5kV), VGS max ±20V.
3 D2 passive Drain of MOSFET 2 (60V VDS max, 340mA continuous drain current).
4 S2 passive Source of MOSFET 2 (N-channel, 60V VDS max, 340mA continuous drain current).
5 G2 input Gate of MOSFET 2 with gate-source Zener ESD protection (HBM 2.5kV), VGS max ±20V.
6 D1 passive Drain of MOSFET 1 (60V VDS max, 340mA continuous drain current).

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 340 mA 1
Power Dissipation PD 150 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =48V,VGS = 0V 2
Gate-body leakage current IGSS -10 10 µA VGS =±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 1.4 2.5 V VDS =VGS, ID =250µA; pulse test: pulse width ≤300µs, duty cycle ≤2% 2
Drain-source on-resistance RDS(on) 1.4 4 Ω VGS =4.5V, ID =200mA; pulse test: pulse width ≤300µs, duty cycle ≤2% 2
Drain-source on-resistance RDS(on) 1.3 3.5 Ω VGS =10V, ID =300mA; pulse test: pulse width ≤300µs, duty cycle ≤2% 2
Diode Forward Voltage VSD 1.5 V VGS=0V, IS=300mA 2
Gate-Source Breakdown Voltage BVGSO -21.5 21.5 V Igs=±1mA (Open Drain) 2
Gate-Source Breakdown Voltage (second printed value) BVGSO 30 V Igs=±1mA (Open Drain) 2
Recovered charge Qr 30 nC VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/μs 2
Input Capacitance Ciss 40 pF VDS =10V,VGS =0V,f =1MHz 2
Output Capacitance Coss 30 pF VDS =10V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 10 pF VDS =10V,VGS =0V,f =1MHz 2
Turn-on delay time td(on) 10 ns VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω 2
Turn-off delay time td(off) 15 ns VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω 2
Reverse recovery Time tf 30 ns VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/μs 2
Thermal Resistance from Junction to Ambient RθJA 833 ℃/W 1

CAD (KiCad official)

  • Symbol: 2N7002KDWX
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT363 (KiCad packages3D, STEP)
  • 3D model files: 2n7002kdwx-etched.step / 2n7002kdwx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002kdwx.step / 2n7002kdwx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (5 pp, sha256 15db4792609c00ea, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF