component
2N7002KDW_R1_00501
Public Made by Adomby adom
PANJIT International MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| 2n7002kdw-r1-00501-etched.step | 6d ago |
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| package.json | 6d ago |
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| README.md | 6d ago |
2N7002KDW_R1_00501
PANJIT International · MOSFETs · SOT-363
2N7002KDW_R1_00501 from PANJIT International, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 60 V VDS rating, 250 mA continuous drain current per device). |
| 2 | G1 | input | Gate of MOSFET 1, ESD protected to 2 kV HBM, with VGS limit of ±20 V and threshold of 1 V to 2.5 V. |
| 3 | D2 | passive | Drain of MOSFET 2 (60 V VDS maximum, 250 mA continuous, 1000 mA pulsed). |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel, 60 V VDS rating, 250 mA continuous drain current per device). |
| 5 | G2 | input | Gate of MOSFET 2, ESD protected to 2 kV HBM, with VGS limit of ±20 V and threshold of 1 V to 2.5 V. |
| 6 | D1 | passive | Drain of MOSFET 1 (60 V VDS maximum, 250 mA continuous, 1000 mA pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 250 | mA | 1 | |||
| Pulsed Drain Current | IDM | 1000 | mA | 1 | |||
| Power Dissipation | PD | 350 | mW | TA=25oC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | oC | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=10uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 3 | Ω | VGS=10V,ID=500mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 4 | Ω | VGS=4.5V,ID=200mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V,VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | 10 | uA | VGS=+20V,VDS=0V | 2 | ||
| Forward Transconductance | gfs | 100 | mS | VDS=15V, ID=250mA | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 250 | mA | 2 | |||
| Diode Forward Voltage | VSD | 0.82 | 1.3 | V | IS=200mA, VGS=0V | 2 | |
| Typical Thermal Resistance Junction to Ambient | RθJA | 357 | oC/W | Junction to Ambient (Note 3) | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. | 2 |
CAD (KiCad official)
- Symbol:
2N7002KDW_R1_00501 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
2n7002kdw-r1-00501-etched.step/2n7002kdw-r1-00501-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002kdw-r1-00501.step/2n7002kdw-r1-00501.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (6 pp, sha256
494c75dbeda3243a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).