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page.json 2n7002kdw-r1-00001: specified limits as data (metadata.characteristics, 24 rows from the datasheet) · Ray 10d ago
README.md 2n7002kdw-r1-00001: specified limits as data (metadata.characteristics, 24 rows from the datasheet) · Ray 10d ago

2N7002KDW_R1_00001

PANJIT International · MOSFETs · SOT-363

2N7002KDW_R1_00001 from PANJIT International, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 60V VDS rating, 115mA continuous drain current for the device).
2 G1 input Gate of MOSFET 1, ESD protected to 2kV HBM, with VGS maximum ±20V and threshold of 1V to 2.5V.
3 D2 passive Drain of MOSFET 2, rated 60V VDS maximum with 115mA continuous drain current.
4 S2 passive Source of MOSFET 2 (N-channel, 60V VDS rating, 115mA continuous drain current for the device).
5 G2 input Gate of MOSFET 2, ESD protected to 2kV HBM, with VGS maximum ±20V and threshold of 1V to 2.5V.
6 D1 passive Drain of MOSFET 1, rated 60V VDS maximum with 115mA continuous drain current.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=10uA 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS=VGS, ID=250uA 2
Drain-Source On-State Resistance RDS(on) 4 Ω VGS=4.5V, ID=200mA 2
Drain-Source On-State Resistance RDS(on) 3 Ω VGS=10V, ID=500mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 2
Gate Body Leakage IGSS 10 uA VGS=+20V, VDS=0V 2
Forward Transconductance gfS 100 mS VDS=15V, ID=250mA 2
Total Gate Charge Qg 0.8 nC VDS=15V, ID=200mA, VGS=4.5V 2
Turn-On Delay Time t on 20 ns VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω 2
Turn-Off Delay Time t off 40 ns VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω 2
Input Capacitance Ciss 35 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Output Capacitance Coss 10 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Reverse Transfer Capacitance Crss 5 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Diode Forward Voltage VSD 0.82 1.3 V IS=200mA, VGS=0V 2
Continuous Diode Forward Current Is -115 mA 2
Pulsed Diode Forward Current IsM -800 mA 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID 115 mA 1
Pulsed Drain Current IDM 800 mA 1
Maximum Power Dissipation at TA=25°C PD 200 mW TA=25°C 1
Maximum Power Dissipation at TA=75°C PD 120 mW TA=75°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 625 °C/W PCB mounted 1

CAD (KiCad official)

  • Symbol: 2N7002KDW_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: 2n7002kdw-r1-00001-etched.step / 2n7002kdw-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002kdw-r1-00001.step / 2n7002kdw-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (7 pp, sha256 7e82f77ce4ce2ae2, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF