component
2N7002KDW_R1_00001
Public Made by Adomby adom
PANJIT International MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2n7002kdw-r1-00001: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
2 files changed
+327−1
README.md+31@@ -24,6 +24,37 @@ | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=10uA | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS=VGS, ID=250uA | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 4 | Ω | VGS=4.5V, ID=200mA | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 3 | Ω | VGS=10V, ID=500mA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=60V, VGS=0V | 2 |+| Gate Body Leakage | IGSS | | | 10 | uA | VGS=+20V, VDS=0V | 2 |+| Forward Transconductance | gfS | 100 | | | mS | VDS=15V, ID=250mA | 2 |+| Total Gate Charge | Qg | | | 0.8 | nC | VDS=15V, ID=200mA, VGS=4.5V | 2 |+| Turn-On Delay Time | t on | | | 20 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |+| Turn-Off Delay Time | t off | | | 40 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |+| Input Capacitance | Ciss | | | 35 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 |+| Output Capacitance | Coss | | | 10 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 |+| Reverse Transfer Capacitance | Crss | | | 5 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 |+| Diode Forward Voltage | VSD | | 0.82 | 1.3 | V | IS=200mA, VGS=0V | 2 |+| Continuous Diode Forward Current | Is | | | -115 | mA | | 2 |+| Pulsed Diode Forward Current | IsM | | | -800 | mA | | 2 |+| Drain-Source Voltage | VDS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 115 | mA | | 1 |+| Pulsed Drain Current | IDM | | | 800 | mA | | 1 |+| Maximum Power Dissipation at TA=25°C | PD | | | 200 | mW | TA=25°C | 1 |+| Maximum Power Dissipation at TA=75°C | PD | | | 120 | mW | TA=75°C | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Junction-to-Ambient Thermal Resistance | RθJA | | | 625 | °C/W | PCB mounted | 1 |+ ## CAD (KiCad official) - Symbol: `2N7002KDW_R1_00001`
page.json+296−1@@ -169,6 +169,301 @@ "Package": "SOT-363", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "7e82f77ce4ce2ae2",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=10uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS=VGS, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "VGS=4.5V, ID=200mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "VGS=10V, ID=500mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS=+20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfS",+ "kind": "electrical",+ "unit": "mS",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VDS=15V, ID=250mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "VDS=15V, ID=200mA, VGS=4.5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "t on",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "t off",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VDS=25V, VGS=0V, f=1.0MHZ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=25V, VGS=0V, f=1.0MHZ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=25V, VGS=0V, f=1.0MHZ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.82,+ "max": 1.3,+ "conditions": "IS=200mA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Diode Forward Current",+ "symbol": "Is",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -115,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Diode Forward Current",+ "symbol": "IsM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -800,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 115,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation at TA=25°C",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation at TA=75°C",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "TA=75°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 625,+ "conditions": "PCB mounted",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -210,4 +505,4 @@ "visibility": { "public": true }-}+}